Amorphous silicon waveguides grown by PECVD on an Indium Tin Oxide buried contact

Optics Communications

Volumn 285, Issue 13-14, 2012, Pages 3088-3092

  Rao, Sandro ^a   Della Corte, Francesco G ^a   Summonte, Caterina ^b  

^a UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

^b CNR Consiglio Nazionale delle Ricerche   (Italy)

Author keywords

Amorphous silicon; Plasma enhanced chemical vapour deposition; Spin on glass; Transparent conductive oxide; Waveguides

Indexed keywords

1550 NM; ACTIVE DEVICES; AMORPHOUS SILICON WAVEGUIDES; BURIED CONTACT; EXPERIMENTAL DATA; HIGH EXTINCTION COEFFICIENTS; INDIUM TIN OXIDE; LOW LOSS; METAL CONTACTS; OPTICAL SCATTERING; OPTICAL SIMULATION; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; PROPAGATION LOSS; SPIN ON GLASS; TECHNOLOGICAL SOLUTION; TEXTURIZATION; TRANSPARENT CONDUCTIVE OXIDES;

AMORPHOUS SILICON; INDIUM COMPOUNDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SPIN GLASS; SURFACE ROUGHNESS; TIN; TIN OXIDES; VAPORS; WAVEGUIDES;

ELECTRIC LOSSES;

EID: 84859783191     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2012.03.001     Document Type: Article

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