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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 32, Issue 3, 2014, Pages

Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

(11) Lomenzo, Patrick D a Zhao, Peng a Takmeel, Qanit a Moghaddam, Saeed a Nishida, Toshikazu a Nelson, Matthew b Fancher, Chris M b Grimley, Everett D b Sang, Xiahan b Lebeau, James M b Jones, Jacob L b

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITORS; DOPING (ADDITIVES); ELECTRODES; FERROELECTRICITY; IRIDIUM; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; THIN FILMS; TIN OXIDES; TITANIUM NITRIDE;

ATOMIC LAYER DEPOSITED; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; FERROELECTRIC BEHAVIOR; FERROELECTRIC CHARACTERISTICS; FERROELECTRIC PROPERTY; FERROELECTRIC RANDOM ACCESS MEMORY DEVICES; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; THIN FILM FERROELECTRICS;

HAFNIUM OXIDES;

EID: 84899562843 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.4873323 Document Type: Article

Times cited : (133)

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