In situ probing electrical response on bending of ZnO nanowires inside transmission electron microscope

Applied Physics Letters

Volumn 92, Issue 21, 2008, Pages

  Liu, K H ^a   Gao, P ^a   Xu, Z ^a   Bai, X D ^a   Wang, E G ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NEMS; ZINC OXIDE;

BENDING-INDUCED CHANGES; ELECTRICAL BEHAVIOR; ELECTRICAL RESPONSE; NANOELECTROMECHANICAL SENSORS;

NANOWIRES;

EID: 44449116274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936080     Document Type: Article

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