The role of oxygen in the development of Hf-base high-k/metal gate stacks for CMOS technologies

ECS Transactions

Volumn 33, Issue 3, 2010, Pages 83-94

  Cartier, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; DEFECTS; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; OXYGEN; THRESHOLD VOLTAGE;

ANNEALING CONDITION; DEVICE FABRICATIONS; HIGH-K/METAL GATES; LOWER TEMPERATURES; POSITIVELY CHARGED; THERMAL EQUILIBRIUMS; TRANSISTOR STRUCTURE; VACANCY CONCENTRATION;

OXYGEN VACANCIES;

EID: 79952670946     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3481595     Document Type: Conference Paper

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