The role of band alignment in p-type conductivity of Na-doped ZnMgO: Polar versus non-polar

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Zhang, H H ^a   Pan, X H ^a   Li, Y ^a   Ye, Z Z ^a   Lu, B ^a   Chen, W ^a   Huang, J Y ^a   Ding, P ^a   Chen, S S ^a   He, H P ^a   Lu, J G ^a   Chen, L X ^a   Ye, C L ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; BAND ALIGNMENTS; CONDUCTION BAND OFFSET; HALL EFFECT MEASUREMENT; P-TYPE CONDUCTIVITY; SAPPHIRE SUBSTRATES; SPONTANEOUS POLARIZATION EFFECTS; VALENCE BAND OFFSETS;

ALIGNMENT; ELECTRIC PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING; SODIUM; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84897909546     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4869481     Document Type: Article

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