P-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 331, Issue 1, 2011, Pages 15-17

  Ding, P ^a   Pan, X H ^a,b   Huang, J Y ^a   He, H P ^a   Lu, B ^a   Zhang, H H ^a   Ye, Z Z ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

A1. Characterization; A1. p type conduction; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting materials

Indexed keywords

A1. CHARACTERIZATION; A3. MOLECULAR BEAM EPITAXY; B1. ZINC COMPOUNDS; P-TYPE CONDUCTION; SEMICONDUCTING MATERIALS;

DIFFRACTION; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE CONCENTRATION; METALLIC FILMS; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION; ZINC COMPOUNDS; ZINC OXIDE;

MOLECULAR BEAMS;

EID: 80051889418     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.07.004     Document Type: Article

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