Deep-ultraviolet light-emitting device realized via a hole-multiplication process

Applied Physics Letters

Volumn 99, Issue 10, 2011, Pages

  Zhu, H ^a,b   Shan, C X ^a   Li, B H ^a   Zhang, Z Z ^a   Yao, B ^a   Shen, D Z ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BRIDGING LAYERS; CARRIER GENERATION; DEEP ULTRAVIOLET; ELECTRONS AND HOLES; IONIZATION PROCESS; LIGHT EMITTING DEVICES;

CURRENT DENSITY; IMPACT IONIZATION; LIGHT EMISSION; ULTRAVIOLET RADIATION; ZINC OXIDE;

ZINC;

EID: 80052785262     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3637575     Document Type: Article

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