Photoluminescence and built-in electric field in ZnO/Mg 0.1Zn0.9O quantum wells

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Zhang, B P ^a   Liu, B L ^a   Yu, J Z ^a   Wang, Q M ^a   Liu, C Y ^b   Liu, Y C ^b   Segawa, Y ^c  

^a XIAMEN UNIVERSITY   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; MAGNESIA; OPTOELECTRONIC DEVICES; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

INTERNAL ELECTRIC FIELDS; QUANTUM-CONFINED STARK REGIME;

PHOTOLUMINESCENCE;

EID: 34047189689     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2716367     Document Type: Article

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