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Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

ZnO light-emitting devices with a lifetime of 6.8 hours

(8) Liu, J S a,b Shan, C X a Shen, H a,b Li, B H a Zhang, Z Z a Liu, L a Zhang, L G a Shen, D Z a

a CHANGCHUN INSTITUTE OF OPTICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMITTING DEVICES; NEAR BAND EDGE EMISSIONS; P-TYPE; ZNO;

CURRENT DENSITY; LITHIUM; ZINC; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84863686447 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4733298 Document Type: Article

Times cited : (78)

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