A di/dt feedback-based active gate driver for smart switching and fast overcurrent protection of IGBT modules

IEEE Transactions on Power Electronics

Volumn 29, Issue 7, 2014, Pages 3720-3732

  Wang, Zhiqiang ^a   Shi, Xiaojie ^a   Tolbert, Leon M ^a   Wang, Fei ^a   Blalock, Benjamin J ^a  

^a University of Tennessee   (United States)

Author keywords

Active gate driver (AGD); IGBT modules; Miller plateau; overcurrent protection; short circuit

Indexed keywords

CONTROLLED CURRENT SOURCE; GATE DRIVERS; IGBT-MODULES; MILLER PLATEAU; PROTECTION FUNCTION; SHORT-CIRCUIT FAULT; STEP-DOWN CONVERTER; SWITCHING TRANSIENT;

FLEXIBLE ELECTRONICS; OVERCURRENT PROTECTION; SHORT CIRCUIT CURRENTS;

POWER QUALITY;

EID: 84897714082     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2278794     Document Type: Article

References (31)

1. R. Weber and A. Charpentier, "How eliminating flying lead IGBT driver interconnect improves performance and reliability," presented at the IEEE Appl. Power Electron. Conf. Expo., Orlando, FL, USA, Feb. 2012.
2. G. Chen, Y.Wang, X. Cai, and S. Igarashi, "Adaptive digital drive for high power and voltage IGBT in multi-MW wind power converter," in Proc. IEEE Power Electron. Motion Control Conf., 2012, pp. 1452-1456.
3. T. Shimizu and K. Wada, "A gate drive circuit of power MOSFETs and IGBTs for low switching losses," in Proc. IEEE 7th Int. Conf. Power Electron., 2007, pp. 857-860.
4. V. John, B. S. Suh, and T. A. Lipo, "High-performance active gate drive for high-power IGBTs," IEEE Trans. Ind. Appl., vol. 35, no. 5, pp. 1108-1117, Nov. 1999. (Pubitemid 32262086)
5. Y. Sun, L. Sun, A. Esmaeli, and K. Zhao, "A novel three stage drive circuit for IGBT," in Proc. IEEE Conf. Ind. Electron. Appl., 2006, pp. 1-6.
6. S. Musumeci, A. Racati, A. Galluzzo, A. Testa, and M. Melito, "A new adaptive driving technique for high current gate controlled devices," in Proc. IEEE Power Electron. Spec. Conf., 1994, pp. 480-486.
7. C. Licitra, S. Musueci, A. Racati, A. Galluzzo, R. Letor, and M. Melito, "A new driving circuit for IGBT devices," IEEE Trans. Power Electron., vol. 10, no. 3, pp. 373-378, May 1995.
8. S.Musumeci, A. Racati, A. Testa, A. Galluzzo, and M. Melito, "Switching behavior improvement of isolated gate-controlled devices," IEEE Trans. Power Electron., vol. 12, no. 4, pp. 645-653, Nov. 1997. (Pubitemid 127763216)
9. P. J. Grbovic, "An IGBT gate driver for feed-forward control of turn-on losses and reverse recovery current," IEEE Trans. Power Electron., vol. 23, no. 2, pp. 643-652, Mar. 2008. (Pubitemid 351460507)
10. P. J. Grbovic, "Turn-on performance of reverse blocking IGBT (RB IGBT) and optimization using advanced gate driver," IEEE Trans. Power Electron., vol. 25, no. 4, pp. 970-980, Apr. 2010.
11. L. Michel, X. Boucher, A. Cheriti, P. Sicard, and F. Sirois, "FPGA implementation of an optimal IGBT gate driver based on Posicast control," IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2569-2575, May 2013.
12. H.Kuhn, "AdaptiveAnsteuerverfahren f̈ur Hochleistungs-IGBTsmit einer digitalen Treibereinheit (in German)," Ph.D. dissertation, Univ. Hannover, Hannover, Germany, 2011.
13. L. Dang, H. Kuhn, and A. Mertens, "Digital adaptive driving strategies for high-voltage IGBTs," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2011, pp. 2993-2999.
14. N. Idir, R. Bausier, and J. J. Franchaud, "Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors," IEEE Trans. Power Electron., vol. 21, no. 4, pp. 849-855, Jul. 2006. (Pubitemid 44194168)
15. K. Fink and S. Bernet, "Advanced gate drive unitwith closed-looped di/dtcontrol," IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2587-2595, Aug. 2013.
16. L. Chen and F. Z. Peng, "Closed-loop gate drive for high power IGBTs," in Proc. IEEE Appl. Power Electron. Conf. Expo., 2009, pp. 1331-1337.
17. B. Wittig and F. W. Fuchs, "Analysis and comparison of turn-off active gate control methods for low-voltage power MOSFETs with high current ratings," IEEE Trans. Power Electron., vol. 27, no. 3, pp. 1632-1640, Mar. 2012.
18. Y. Lobsiger and J. W. Kolar, "Closed-loop IGBT gate drive featuring highly dynamic di/dt and dv/dt control," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2012, pp. 4754-4761.
19. N. Gao, Y.Wang, X. Cai, and S. Igarashi, "Self-adaptivemulti-stage IGBT drivingmethod in medium voltagewind generation system," in Proc. IEEE Power Electron. Motion Control Conf., 2012, pp. 2287-2289.
20. L. Dulau, S. Pontarollo, A. Boimond, J.-F. Garnier, N. Giraudo, and O. Terrasse, "A new gate driver integrated circuit for IGBT devices with advanced protections," IEEE Trans. Power Electron., vol. 21, no. 1, pp. 38-44, Jan. 2006.
21. R. S. Chokhawala, J. Catt, and L. Kiraly, "A discussion on IGBT shortcircuit behavior and fault protection schemes," IEEE Trans. Ind. Appl., vol. 31, no. 2, pp. 256-263, Mar. 1995.
22. V. Bolloju and J.Yang, "Influence of short circuit conditions on IGBT short circuit current in motor drives," in Proc. IEEE Appl. Power Electron. Conf. Expo., 2011, pp. 1675-1679.
23. M. Kudoh, Y. Hoshi, S. Momota, T. Fujihira, and K. Sakurai, "Current sensing IGBT for future intelligent power module," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, 1996, pp. 303-306.
24. B. Lu and S. K. Sharma, "A literature review of IGBT fault diagnostic and protection methods for power inverters," IEEE Trans. Ind. Appl., vol. 45, no. 5, pp. 1770-1777, Sep. 2009.
25. V. John, B. Suh, and T. A. Lipo, "Fast-clamped short-circuit protection of IGBTs," IEEE Trans. Ind. Appl., vol. 35, no. 2, pp. 477-486, Mar./Apr. 1999.
26. Z. Xu, M. Li, F.Wang, and Z. Liang, "Investigation of Si IGBT operation at 200 C for traction applications," IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2604-2615, May 2013.
27. L. Chen and F. Z. Peng, "Active fault protection for high power IGBTs," in Proc. IEEE Appl. Power Electron. Conf. Expo., 2009, pp. 2050-2054.
28. M. A. Rodŕguez-Blanco, A. Claudio-Śanchez, D. Theilliol, L. G. Vela-Vald́es, P. Sibaja-Teŕan, L.Herńandez- Gonźalez, and J.Aguayo-Alquicira, "A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system," IEEE Trans. Ind. Electron., vol. 58, no. 5, pp. 1625-1633, May 2011.
29. M. A. Rodriguez, A. Claudio, D. Theilliol, and L. G. Velan, "A new fault detection technique for IGBT based on gate voltage monitoring," in Proc. IEEE Power Electron. Spec. Conf., 2007, pp. 1001-1005.
30. J. Lee and D. Hyun, "Gate voltage pattern analyze for short-circuit protection in IGBT inverters," in Proc. IEEE Power Electron. Spec. Conf., 2007, pp. 1913-1917.
31. L. Pierre, B. Dominique,M. Herve, A. Bruno, and R. Jean-Francois, "Fast over-current protection of high power IGBT modules," in Proc. Eur. Conf. Power Electron. Appl., 2005, pp. 1-10.