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Volumn , Issue , 2009, Pages 1331-1337

Closed-Loop Gate Drive for High Power IGBTs

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED-LOOP; CLOSED-LOOP CONTROL; CURRENT OVERSHOOT; DUTY CYCLES; ENERGY LOSS; GATE CONTROL; GATE DRIVES; GATE-DRIVE SIGNAL; HIGH-POWER; NOVEL METHODS; PARASITIC INDUCTANCES; POWER DEVICES; SWITCHING SPEED; VOLTAGE OVERSHOOT;

EID: 65949090936     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2009.4802837     Document Type: Conference Paper
Times cited : (99)

References (25)
  • 2
    • 0026136708 scopus 로고
    • "An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT),"
    • April
    • A. R. Hefner, Jr., "An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)," IEEE Trans. on Power Electronics, vol.6, issue 2, April 1991 pp. 208-219.
    • (1991) IEEE Trans. on Power Electronics , vol.6 , Issue.2 , pp. 208-219
    • Hefner Jr., A.R.1
  • 3
    • 66349134170 scopus 로고
    • "An optimum drive and clamp circuit design with controlled switching for a snubberless PWM-VSI-IGBT inverter leg,"
    • F. Blaabjerg and J. K. Pederson, "An optimum drive and clamp circuit design with controlled switching for a snubberless PWM-VSI-IGBT inverter leg," in Proc. IEEE PESC'92, 1992, pp. 289-297.
    • (1992) In Proc. IEEE PESC'92 , pp. 289-297
    • Blaabjerg, F.1    Pederson, J.K.2
  • 5
    • 0027881954 scopus 로고
    • "Optimization of the turn-off performance of IGBT at over-current and short-circuit current,"
    • H. G. Eckel and L. Sack, "Optimization of the turn-off performance of IGBT at over-current and short-circuit current," in Proc. EPE'93, 1993, pp. 317-322.
    • (1993) In Proc. EPE'93 , pp. 317-322
    • Eckel, H.G.1    Sack, L.2
  • 6
    • 0031381277 scopus 로고    scopus 로고
    • "An Improved Gate Control Scheme for Snubberless Operation of High Power IGBTs,"
    • H. Lee, Y. Lee, B. Suh, and D. Hyun, "An Improved Gate Control Scheme for Snubberless Operation of High Power IGBTs," IEEE-IAS 1997, pp. 975-982.
    • (1997) IEEE-IAS , pp. 975-982
    • Lee, H.1    Lee, Y.2    Suh, B.3    Hyun, D.4
  • 7
    • 65949099369 scopus 로고
    • "MOSFET operating under hard switching mode: voltage and current gradients control,"
    • Italy
    • J. P. Berry, "MOSFET operating under hard switching mode: voltage and current gradients control," EPE conf. 1991, pp. 130-134, Italy, 1991.
    • (1991) EPE conf. , vol.1991 , pp. 130-134
    • Berry, J.P.1
  • 8
    • 0029747818 scopus 로고    scopus 로고
    • "High performance gate drives utilizing the IGBT in the active region,"
    • A. N. Githiari, R. J. Leedham, and P. R. Palmer, "High performance gate drives utilizing the IGBT in the active region," in Proc. IEEE PESC'96, 1996, pp. 1754-1759.
    • (1996) In Proc. IEEE PESC'96 , pp. 1754-1759
    • Githiari, A.N.1    Leedham, R.J.2    Palmer, P.R.3
  • 9
    • 0030691612 scopus 로고    scopus 로고
    • "An Active Gate Drive Circuit for IGBTs to Realize Low-noise and Snubberless System,"
    • S. Igarashi, S. Takizawa, M. Tabata, M. Takei, and K. Kuroki, "An Active Gate Drive Circuit for IGBTs to Realize Low-noise and Snubberless System," ISPSD, 1997, pp. 69-72.
    • (1997) ISPSD , pp. 69-72
    • Igarashi, S.1    Takizawa, S.2    Tabata, M.3    Takei, M.4    Kuroki, K.5
  • 10
    • 0028013960 scopus 로고
    • "A new adaptive driving technique for high current gate controlled devices,"
    • S. Musumeci, A. Raciti, A. Testa, A. Galluzzo, and M. Melito, "A new adaptive driving technique for high current gate controlled devices," in Proc. IEEE APEC, 1994, pp. 480-486.
    • (1994) In Proc. IEEE APEC , pp. 480-486
    • Musumeci, S.1    Raciti, A.2    Testa, A.3    Galluzzo, A.4    Melito, M.5
  • 11
    • 0033184211 scopus 로고    scopus 로고
    • "High performance active gate drive for high power IGBTs,"
    • Sept./Oct.
    • V. John, B. Suh and T.A. Lipo, "High performance active gate drive for high power IGBTs," IEEE Trans. Industry Appl., VOL.35, NO. 5, Sept./Oct. 1999.pp.1108-1117.
    • (1999) IEEE Trans. Industry Appl. , vol.35 , Issue.5 , pp. 1108-1117
    • John, V.1    Suh, B.2    Lipo, T.A.3
  • 13
    • 0029779505 scopus 로고    scopus 로고
    • "Gate-controlled dv/dt and di/dt limitation in high power IGBT converters,"
    • January
    • C. Gerster and P. Hofer, "Gate-controlled dv/dt and di/dt limitation in high power IGBT converters," EPE Journal, Vol.5, no 3/4, January 1996, page 11-16.
    • (1996) EPE Journal , vol.5 , Issue.3-4 , pp. 11-16
    • Gerster, C.1    Hofer, P.2
  • 14
    • 65949115360 scopus 로고
    • "Dynamic Gate Controller (DGC)-A new IGBT Gate Unit for High Current/ High Voltage IGBT Modules,"
    • H. R. uedi and P. K. ohli, "Dynamic Gate Controller (DGC)-A new IGBT Gate Unit for High Current/ High Voltage IGBT Modules," PCIM 1995, pp. 241-249.
    • (1995) PCIM , pp. 241-24
    • Uedi, H.R.1    Ohli, P.K.2
  • 15
    • 33947648752 scopus 로고    scopus 로고
    • "Active Voltage Clamping Techniques for Over-voltage Protection of MOS-Controlled Power Transistors,"
    • T. Reimann, R. Krummer, and J. Petzoldt, "Active Voltage Clamping Techniques for Over-voltage Protection of MOS-Controlled Power Transistors," EPE 1997, pp.4043-4048.
    • (1997) EPE , pp. 4043-4048
    • Reimann, T.1    Krummer, R.2    Petzoldt, J.3
  • 16
    • 0029779505 scopus 로고    scopus 로고
    • "Gate-controlled dv/dt and di/dt limitation in high power IGBT converters,"
    • January
    • C. Gerster and P. Hofer, "Gate-controlled dv/dt and di/dt limitation in high power IGBT converters," EPE Journal, Vol.5, no 3/4, January 1996, page 11-16.
    • (1996) EPE Journal , vol.5 , Issue.3-4 , pp. 11-16
    • Gerster, C.1    Hofer, P.2
  • 17
    • 0031176418 scopus 로고    scopus 로고
    • The series connection of IGBT's with active voltage sharing
    • PII S0885899397049909
    • P. R. Palmer and A. N. Githiari, "The Series Connection of IGBTs with Active Voltage Sharing," IEEE Trans. On Power Electronics, vol.12, No.4, pp. 637-644, 1997. (Pubitemid 127763215)
    • (1997) IEEE Transactions on Power Electronics , vol.12 , Issue.4 , pp. 637-644
    • Palmer, P.R.1    Githiari, A.N.2
  • 18
    • 0030689898 scopus 로고    scopus 로고
    • "Some scaling issues in the active control of IGBT modules for high power applications,"
    • P. R. Palmer, A. N. Githiari, and R. J. Leedham, "Some scaling issues in the active control of IGBT modules for high power applications," in IEEE PESC 1997, pp. 854- 860.
    • (1997) In IEEE PESC , pp. 854-860
    • Palmer, P.R.1    Githiari, A.N.2    Leedham, R.J.3
  • 19
    • 0034795058 scopus 로고    scopus 로고
    • "Circuit simulator models for the diode and IGBT with full temperature dependent features,"
    • P. R. Palmer, P. Y. Eng, J. C. Joyce, J. Hudgins, E. Santi, and R. Dougal, "Circuit simulator models for the diode and IGBT with full temperature dependent features," in IEEE PESC 2001, pp. 2171-2177.
    • (2001) In IEEE PESC , pp. 2171-2177
    • Palmer, P.R.1    Eng, P.Y.2    Joyce, J.C.3    Hudgins, J.4    Santi, E.5    Dougal, R.6
  • 20
    • 3843094960 scopus 로고    scopus 로고
    • "Active voltage control of IGBTs for high power applications,"
    • Jul.
    • P. R. Palmer and H. S. Rajamani, "Active voltage control of IGBTs for high power applications," IEEE Trans. Power Electron., vol.19, no. 4, pp. 894-901, Jul. 2004.
    • (2004) IEEE Trans. Power Electron. , vol.19 , Issue.4 , pp. 894-901
    • Palmer, P.R.1    Rajamani, H.S.2
  • 23
    • 34047151234 scopus 로고    scopus 로고
    • Numerical optimization of an active voltage controller for high-power IGBT converters
    • DOI 10.1109/TPEL.2006.889895
    • A. T. Bryant,Y. Wang, S. J. Finney, T. C. Lim, and P. R. Palmer, "Numerical Optimization of an Active Voltage Controller for High-Power IGBT Converters," IEEE Tran. On Power Electronics. VOL.22, NO. 2, MARCH 2007. (Pubitemid 46523160)
    • (2007) IEEE Transactions on Power Electronics , vol.22 , Issue.2 , pp. 374-383
    • Bryant, A.T.1    Wang, Y.2    Finney, S.J.3    Lim, T.C.4    Palmer, P.R.5
  • 24
    • 34547898054 scopus 로고    scopus 로고
    • Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink
    • DOI 10.1109/TIA.2007.900443
    • A. T. Bryant, P. R. Palmer, E. Santi, and J. L. Hudgins "Simulation and Optimization of Diode and Insulated Gate Bipolar Transistor Interaction in a Chopper Cell Using MATLAB and Simulink,", IEEE Tran. On Power Electronics, VOL.43, NO. 4, JULY/AUG. 2007. (Pubitemid 47249960)
    • (2007) IEEE Transactions on Industry Applications , vol.43 , Issue.4 , pp. 874-883
    • Bryant, A.T.1    Palmer, P.R.2    Santi, E.3    Hudgins, J.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.