Closed-loop IGBT gate drive featuring highly dynamic di/dt and dv/dt control

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 4754-4761

  Lobsiger, Yanick ^a   Kolar, Johann W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG CONTROLS; CLOSED-LOOP; FEEDBACK SIGNAL; GATE DRIVES; PASSIVE MEASUREMENTS; PI CONTROLLER; SUB-MICROSECOND; SWITCHING TIME;

ENERGY CONVERSION; EXHIBITIONS; OPERATIONAL AMPLIFIERS; ROBUSTNESS (CONTROL SYSTEMS);

CLOSED LOOP CONTROL SYSTEMS;

EID: 84870910239     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342173     Document Type: Conference Paper

References (40)

1. L. Chen and F. Z. Peng, "Switching loss analysis of closed-loop gate drive," in Proc. of the 25th Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), Palm Springs, CA, USA, Feb. 2010, pp. 1119-1123.
2. J. D. Kagerbauer and T. M. Jahns, "Development of an active dv/dt control algorithm for reducing inverter conducted EMI with minimal impact on switching losses," in Proc. of the 38th Annual IEEE Power Electronics Specialists Conf. (PESC), Orlando, FL, USA, Jun. 2007, pp. 894-900.
3. A. Consoli, S. Musumeci, G. Oriti, and A. Testa, "An innovative EMI reduction design technique in power converters," IEEE Trans. Electromagn. Compat., vol. 38, no. 4, pp. 567-575, Nov. 1996.
4. A. Galluzzo, M. Melito, G. Belverde, S. Musumeci, A. Raciti, and A. Testa, "Switching characteristic improvement of modern gate controlled devices," in Proc. of the 5th European Conf. on Power Electronics and Application (EPE), Brighton, UK, Sep. 1993, pp. 374-379.
5. D. Giandomenico, D. S. Kuo, J. Choi, and C. Hu, "Analysis and prevention of anomalous oscillations in a vertical power MOSFET," in Proc. of the 11th Annual Int. Power Electronics Conf. (Powercon), Dallas, TX, USA, Apr. 1984, pp. 1-9.
6. R. Bayerer, "Steuerung von Leistungshalbleiter (in German)," in Proc. of the ECPE-Workshop "Ansteuer-und Schutzschaltungen für MOSFET und IGBT", Nuremberg, Germany, Feb. 2010, pp. 38-45.
7. -, "Switching behavior of power switches (IGBT, MOSFET)," in Proc. of the ECPE-Workshop "Electronics around the Power Switch: Gate Drivers, Sensors and Control", Munich, Germany, Jun. 2011, pp. 23-25.
8. R. Herzer and A. Wintrich, "IGBT gate drive technologies-principles and applications," in Tutorial at the Power Conversion and Intelligent Motion Conf. (PCIM Europe), Nuremberg, Germany, May 2012, p. 105.
9. A. Volke and M. Hornkamp, IGBT Modules-Technologies, Driver and Application, 1st ed. Infineon Technologies AG, Munich, 2011.
10. P. J. Grbovic, "An IGBT gate driver for feed-forward control of turnon losses and reverse recovery current," IEEE Trans. Power Electron., vol. 23, no. 2, pp. 643-652, Mar. 2008.
11. C. Licitra, S. Musumeci, A. Raciti, A. U. Galluzzo, R. Letor, and M. Melito, "A new driving circuit for IGBT devices," IEEE Trans. Power Electron., vol. 10, no. 3, pp. 373-378, May 1995.
12. S. Takizawa, S. Igarashi, and K. Kuroki, "A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses," in Proc. of the 29th Annual IEEE Power Electronics Specialists Conf. (PESC), vol. 2, Fukuoka, Japan, May 1998, pp. 1443-1449.
13. R. Hemmer, "Intelligent IGBT drivers with exceptional driving and protection features," in Proc. of the 13th European Conf. on Power Electronics and Application (EPE), Barcelona, Spain, Sep. 2009.
14. S. Musumeci, A. Raciti, A. Testa, A. Galluzzo, and M. Melito, "A new adaptive driving technique for high current gate controlled devices," in Proc. of the 9th Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), Orlando, FL, USA, Feb. 1994, pp. 480-486.
15. -, "Switching-behavior improvement of insulated gate-controlled devices," IEEE Trans. Power Electron., vol. 12, no. 4, pp. 645-653, Jul. 1997.
16. V. John, B.-S. Suh, and T. A. Lipo, "High performance active gate drive for high power IGBTs," in Proc. of the 33rd IEEE Industry Applications Society Annual Meeting (IAS), vol. 2, St. Louis, MO, USA, Oct. 1998, pp. 1519-1529.
17. -, "High-performance active gate drive for high-power IGBT's," IEEE Trans. Ind. Appl., vol. 35, no. 5, pp. 1108-1117, Sep./Oct. 1999.
18. G. Schmitt, R. Kennel, and J. Holtz, "Voltage gradient limitation of IGBTs by optimised gate-current profiles," in Proc. of the 39th Annual IEEE Power Electronics Specialists Conf. (PESC), Rhodes, Greece, Jun. 2008, pp. 3592-3596.
19. G. Schmitt, "Ansteuerung von Hochvolt-IGBTs über optimierte Gatestromprofile (in German)," Ph.D. dissertation, University of Wuppertal, Germany, 2009.
20. B. Wittig and F. W. Fuchs, "Analysis and comparison of turn-off active gate control methods for low-voltage power MOSFETs with high current ratings," IEEE Trans. Power Electron., vol. 27, no. 3, pp. 1632-1640, Mar. 2012.
21. N. Idir, R. Bausiere, and J. J. Franchaud, "Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors," IEEE Trans. Power Electron., vol. 21, no. 4, pp. 849-855, Jul. 2006.
22. A. N. Githiari, R. J. Leedham, and P. R. Palmer, "High performance gate drives for utilizing the IGBT in the active region," in Proc. of the 27th Annual IEEE Power Electronics Specialists Conf. (PESC), vol. 2, Baveno, Italy, Jun. 1996, pp. 1754-1759.
23. P. R. Palmer and H. S. Rajamani, "Active voltage control of IGBTs for high power applications," IEEE Trans. Power Electron., vol. 19, no. 4, pp. 894-901, Jul. 2004.
24. Y. Wang, A. T. Bryant, P. R. Palmer, S. J. Finney, M. Abu-Khaizaran, and G. Li, "An analysis of high power IGBT switching under cascade active voltage control," in Proc. of the 40th IEEE Industry Applications Society Annual Meeting (IAS), vol. 2, Hong Kong, China, Oct. 2005, pp. 806-812.
25. Y. Wang, P. R. Palmer, A. T. Bryant, S. J. Finney, M. S. Abu-Khaizaran, and G. Li, "An analysis of high-power IGBT switching under cascade active voltage control," IEEE Trans. Ind. Appl., vol. 45, no. 2, pp. 861-870, Mar./Apr. 2009.
26. Y. Wang, P. R. Palmer, T. C. Lim, S. J. Finney, and A. T. Bryant, "Realtime optimization of IGBT/diode cell switching under active voltage control," in Proc. of the 41st IEEE Industry Applications Society Annual Meeting (IAS), vol. 5, Tampa, FL, USA, Oct. 2006, pp. 2262-2268.
27. H. Kuhn, T. Koneke, and A. Mertens, "Considerations for a digital gate unit in high power applications," in Proc. of the 39th Annual IEEE Power Electronics Specialists Conf. (PESC), Rhodes, Greece, Jun. 2008, pp. 2784-2790.
28. -, "Potential of digital gate units in high power appliations," in Proc. of the 13th Int. Conf. on Power Electronics and Motion Control (EPEPEMC), Poznan, Poland, Sep. 2008, pp. 1458-1464.
29. H. Kuhn, "Adaptive Ansteuerverfahren für Hochleistungs-IGBTs mit einer digitalen Treibereinheit (in German)," Ph.D. dissertation, University of Hannover, Germany, 2011.
30. L. Dang, H. Kuhn, and A. Mertens, "Digital adaptive driving strategies for high-voltage IGBTs," in Proc. of the IEEE Energy Conversion Congress and Exposition (ECCE), Phoenix, AZ, USA, Sep. 2011, pp. 2993-2999.
31. J. P. Berry, "MOSFET operating under hard switching mode: voltage and current gradients control," in Proc. of the Symposium on Materials and Devices for Power Electronics (EPE-MADEP), Firenze, Italy, Sep. 1991, pp. 130-134.
32. C. Gerster, P. Hofer, and N. Karrer, "Gate-control strategies for snubberless operation of series connected IGBTs," in Proc. of the 27th Annual IEEE Power Electronics Specialists Conf. (PESC), vol. 2, Baveno, Italy, Jun. 1996, pp. 1739-1742.
33. L. Chen, "Intelligent gate drive for high power MOSFETs and IGBTs," Ph.D. dissertation, Michigan State University, USA, 2008.
34. L. Chen and F. Z. Peng, "Closed-loop gate drive for high power IGBTs," in Proc. of the 24th Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), Washington, DC, USA, Feb. 2009, pp. 1331-1337.
35. L. Chen, B. Ge, and F. Z. Peng, "Modeling and analysis of closed-loop gate drive," in Proc. of the 25th Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), Palm Springs, CA, USA, Mar. 2010, pp. 1124-1130.
36. K. Fink, "Untersuchung neuartiger Konzepte zur geregelten Ansteuerung von IGBTs (in German)," Ph.D. dissertation, Berlin Institute of Technology, Germany, 2010.
37. S. Park and T. M. Jahns, "Flexible dv/dt and di/dt control method for insulated gate power switches," in Proc. of the 36th IEEE Industry Applications Society Annual Meeting (IAS), vol. 2, Chicago, IL, USA, Sep./Oct. 2001, pp. 1038-1045.
38. -, "Flexible dv/dt and di/dt control method for insulated gate power switches," IEEE Trans. Ind. Appl., vol. 39, no. 3, pp. 657-664, May./Jun. 2003.
39. C. Dörlemann and J. Melbert, "New IGBT-driver with independent dv/dt-and di/dt-feedback-control for optimized switching behavior," in Proc. of the 2nd Int. Conf. on Integrated Power Systems (CIPS), Bremen, Germany, Jun. 2002, pp. 107-114.
40. C. Dörlemann, "Geregelte Ansteuerung von Insulated Gate Bipolar Transistoren (IGBT)-Anwendung im Frequenzumrichter-(in German)," Ph.D. dissertation, Ruhr University Bochum, Germany, 2002.