Turn-on performance of reverse blocking IGBT (RB IGBT) and optimization using advanced gate driver

IEEE Transactions on Power Electronics

Volumn 25, Issue 4, 2010, Pages 970-980

  Grbović, Petar J ^a,b   Gruson, François ^b,c   Idir, Nadir ^b,c   Moigne, Philippe Le ^b,c  

^a Schneider Toshiba Inverter Europe   (France)

^b ECOLE CENTRALE DE LILLE   (France)

^c UNIV LILLE   (France)

Author keywords

Gate emitter voltage; Matrix converter; Reverse blocking insulated gate bipolar transistor (RB IGBT) gate driver; Reverse recovery current; Turn on losses

Indexed keywords

MATRIX CONVERTERS; RECOVERY;

COLLECTOR-EMITTER VOLTAGE; GATE DRIVERS; GATE-EMITTER VOLTAGES; REVERSE BLOCKING IGBT; REVERSE BLOCKING INSULATED GATE BIPOLAR TRANSISTORS; REVERSE RECOVERY CURRENT; SWITCHING PERFORMANCE; VOLTAGE-FALLING PHASE;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 77951019701     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2031805     Document Type: Article

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