Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors

IEEE Transactions on Power Electronics

Volumn 21, Issue 4, 2006, Pages 849-855

  Idir, Nadir ^a   Bausière, Robert ^a   Franchaud, Jean Jacques ^a  

^a University of Lille   (France)

Author keywords

Active gate voltage control (AGVC); Electromagnetic interference (EMI); Insulated gate bipolar transistors (IGBTs); Metal oxide semiconductor field effect transistor (MOSFET)

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS; MOSFET DEVICES; POWER CONVERTERS; ROBUSTNESS (CONTROL SYSTEMS); SIGNAL INTERFERENCE; SWITCHING SYSTEMS; VOLTAGE CONTROL;

ACTIVE GATE VOLTAGE CONTROL; GATE POWER TRANSISTORS;

GATES (TRANSISTOR);

EID: 33746876661     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.876895     Document Type: Article

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