A gate drive circuit of power MOSFETs and IGBTs for low switching losses

7th Internatonal Conference on Power Electronics, ICPE'07

Volumn , Issue , 2007, Pages 857-860

  Shimizu, Toshihisa ^a   Wada, Keiji ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; SWITCHING; TIMING CIRCUITS;

GATE DRIVE CIRCUITS; HIGH-FREQUENCY SWITCHING; POWER DENSITIES; POWER MOSFETS; QUASI RESONANT; SWITCHING LOSS; TURN-OFF LOSS;

CHOPPERS (CIRCUITS);

EID: 58149174232     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICPE.2007.4692507     Document Type: Conference Paper

References (5)

1. K.Takao, et.al, "Novel exact power loss design method for high output power density converter," Conference Record of IEEE PESC'06, pp.2651-2655, 2006.
2. T.Shimizu, H.Kinjyo, K.Wada, "A Novel High-frequency Current Output Inverter based on an Immittance Conversion Element and a Hybrid MOSFET-SiC Diode Switch," Conference Record of IEEE PESC'03, pp.2003-2008, 2003.
3. S.Finney, B.Williams, T.Green, "RCD Snubber Revised," IEEE Trans. on Industry Applications, vol.32. No.l, pp.155-160, 1996.
4. R.Chokhawala, J.Catt, B.Pelly, "Gate Drive Circuit for IGBT Module,"
5. IEEE Trans. on Power Electronics, Vol.31, No.3, pp.603-611, 1995.