Current sensing IGBT for future intelligent power module

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 303-306

  Kudoh, M ^a   Hoshi, Y ^a   Momota, S ^a   Fujihira, T ^a   Sakurai, K ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; OVERCURRENT PROTECTION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

CURRENT SENSING RATIO; INSULATED GATE BIPOLAR TRANSISTORS; INTELLIGENT POWER MODULE;

BIPOLAR TRANSISTORS;

EID: 0029700428     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)