FPGA implementation of an optimal IGBT gate driver based on posicast control

IEEE Transactions on Power Electronics

Volumn 28, Issue 5, 2013, Pages 2569-2575

  Michel, Loïc ^a   Boucher, Xavier ^a   Cheriti, Ahmed ^a   Sicard, Pierre ^a   Sirois, Frédéric ^b  

^a UNIVERSITÉ DU QUÉBEC À TROIS RIVIÈRES   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

Driver circuits; field programmable gate arrays (FPGA); optimization methods; power conversion; power semiconductor switches

Indexed keywords

DRIVER CIRCUIT; ELECTRICAL SWITCHING; FEEDBACK CURRENTS; FPGA IMPLEMENTATIONS; GATE DRIVERS; GATE SIGNALS; IGBT MODELS; OPTIMIZATION METHOD; PARASITIC INDUCTANCES; POSICAST CONTROL; POWER CONVERSION; POWER SEMICONDUCTOR SWITCHES; SWITCHING MECHANISM;

FIELD PROGRAMMABLE GATE ARRAYS (FPGA); INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS;

OPTIMIZATION;

EID: 84870550290     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2207463     Document Type: Article

References (24)

1. R. Chokhawala, J. Catt, and B. Pelly, "Gate drive considerations for IGBT modules," in Proc. Conf. Rec. IEEE Industry Appl. Soc. Annu. Meeting, Oct. 1992, pp. 1186-1195.
2. D.W. Brown, M. Abbas, A. Ginart, I. Ali, P.W. Kalgren, and G. J. Vachtsevanos, "Turn-off time as an early indicator of insulated gate bipolar transistor latch-up," IEEE Trans. Power Electron., vol. 27, no. 2, pp. 479- 489, Feb. 2012.
3. A. Bryant, Y. Shaoyong, P. Mawby, X. Dawei, R. Li, P. Tavner, and P. Palmer, "Investigation into IGBT dV/dt during turn-off and its temperature dependence," IEEE Trans. Power Electron., vol. 26, no. 10, pp. 3019-3031, Oct. 2011.
4. R. Hemmer, "Intelligent IGBT drivers with exceptional driving and protection features," in Proc. 13th Eur. Conf. Power Electron. Appl., Sep. 2009, pp. 1-4.
5. L. Chen and F. Z. Peng, "Closed-loop gate drive for high power IGBTs," in Proc. 24th Annu. IEEE Appl. Power Electron. Conf. Expo., Feb. 2009, pp. 1331-1337.
6. L. Chen and F. Z. Peng, "Switching loss analysis of closed-loop gate drive," in Proc. 25th Annu. IEEE Appl. Power Electron. Conf. Expo., Feb. 2010, pp. 1119-1123.
7. S. K. Biswas, B. Basak, and K. S. Rajashekara, "Safe operation of IGBTs in switching converters," in Proc. Int. Conf. Power Electron. Drive Syst., 1995, vol. 24, pp. 65-70.
8. L. Dulau, S. Pontarollo, A. Boimond, J.-F. Garnier, N. Giraudo, and O. Terrasse, "A new gate driver integrated circuit for IGBT devices with advanced protections," IEEE Trans. Power Electron., vol. 21, no. 1, pp. 38-44, Jan. 2006.
9. S. Yanqun, J. Jiang, Y. Xiong, Y. Deng, X. He, and Z. Zeng, "Parasitic inductance effects on the switching loss measurement of power semiconductor devices," in Proc. IEEE Int. Symp. Ind. Electron., Jul. 2006, vol. 2, pp. 847-852.
10. P. J. Grbovic, "An IGBT gate driver for feed-forward control of turnon losses and reverse recovery current," IEEE Trans. Power Electron., vol. 23, no. 2, pp. 643-652, Mar. 2008. (Pubitemid 351460507)
11. P.J. Grbovic, F. Gruson, N. Idir, and P. Le Moigne, "Turn-on performance of reverse blocking IGBT (RB IGBT) and optimization using advanced gate driver," IEEE Trans. Power Electron., vol. 25, no. 4, pp. 970-980, Apr. 2010.
12. O. J. M. Smith, "Posicast control of damped oscillatory systems," Proc. IRE, vol. 45, no. 9, pp. 1249-1255, Sep. 1957.
13. G. Cook, "An application of half-cycle Posicast," IEEE Trans. Autom. Control, vol. 11, no. 3, pp. 556-559, Jul. 1966.
14. J. Y. Hung, "Feedback control with Posicast," IEEE Trans. Ind. Electron., vol. 50, no. 1, pp. 94-99, Feb. 2003.
15. M. Rasoulzadeh and M. B. Ghaznavi-Ghoushchi, "Oscillation controlled electronic systems design using Posicast-based pulse pre-shaping," in Proc. 52nd IEEE Int. Midwest Symp. Circuits Syst., Aug. 2009, pp. 24-28.
16. F. Qi, R. M. Nelms, and J. Y. Hung, "Posicast-based digital control of the buck converter," IEEE Trans. Ind. Electron., vol. 53, no. 3, pp. 759-767, Jun. 2006. (Pubitemid 43834594)
17. O. M. Bashnyakov, "On optimal bang-bang control," Nonlinear Oscillations, vol. 5, no. 2, pp. 133-139, 2002.
18. N. C. Singer and W. P. Seering, "Experimental verification of command shaping methods for controlling residual vibration in flexible robots," in Proc. Amer. Control Conf., 1990, pp. 1738-1744.
19. T. D. Tuttle and W. P. Seering, "Creating time-optimal commands for systems with denominator dynamics," in Proc. IEEE Int. Conf. Control Appl., Sep. 1996, pp. 385-390.
20. N. Idir, R. Bausiere, and J. J. Franchaud, "Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors," IEEE Trans. Power Electron., vol. 21, no. 4, pp. 849-855, Jul. 2006. (Pubitemid 44194168)
21. J.-T. Hsu and K. D. T. Ngo, "Behavioral modeling of the IGBT using the Hammerstein configuration," IEEE Trans. Power Electron., vol. 11, no. 6, pp. 746-754, Nov. 1996. (Pubitemid 126780438)
22. K.Wanying, A. Hyungkeun, andM. A. E. Nokali, "A parameter extraction algorithm for an IGBT behavioral model," IEEE Trans. Power Electron., vol. 19, no. 6, pp. 1365-1371, Nov. 2004.
23. S. Pittet and A. Rufer, "The equivalent electron density concept for static and dynamic modeling of the IGBT base in soft- and hard-switching applications," IEEE Trans. Power Electron., vol. 22, no. 6, pp. 2223- 2233, Nov. 2007. (Pubitemid 350154056)
24. V. K. Khanna, The Insulated Gate Bipolar Transistor (IGBT): Theory and Design. Piscataway NJ: IEEE Press, 2003.