Low voltage operating field effect transistors with composite In 2O3-ZnO-ZnGa2O4 nanofiber network as active channel layer

ACS Nano

Volumn 8, Issue 3, 2014, Pages 2318-2327

  Choi, Seung Hoon ^a   Jang, Bong Hoon ^b   Park, Jin Seong ^c   Demadrille, Renaud ^d   Tuller, Harry L ^e   Kim, Il Doo ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hanyang University   (South Korea)

^d UNIV GRENOBLE ALPES   (France)

^e Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

electrospinning; field effect transistors; high K gate insulator; In Ga Zn O composite oxide; low voltage operation; nanofibers; semiconducting channel

Indexed keywords

COMPLEX NETWORKS; ELECTROSPINNING; FIELD EFFECT TRANSISTORS; NANOFIBERS; NANOWIRES; NONVOLATILE STORAGE; ZINC;

ACTIVE CHANNEL LAYERS; FIELD EFFECT TRANSISTOR (FETS); HIGH FIELD EFFECT MOBILITY; HIGH-K GATE INSULATOR; IN-GA-ZN-O; LOW THRESHOLD VOLTAGE; LOW VOLTAGE OPERATION; SEMICONDUCTING CHANNEL;

ZINC OXIDE;

EID: 84897001833     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn405769j     Document Type: Article

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