Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3159-3164

  Shieh, Ming Shan ^a   Sang, Jen Yi ^a   Chen, Chih Yang ^a   Wang, Shen De ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electrical stress; Gate control capability; Multi channel; Poly Si TFTs

Indexed keywords

ELECTRIC CURRENTS; IONIZATION; POLYSILICON; STRESSES; THRESHOLD VOLTAGE;

ELECTRICAL STRESS; GATE CONTROL CAPABILITY; MULTI-CHANNEL; POLY-SI TFTS;

THIN FILM TRANSISTORS;

EID: 33646950704     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3159     Document Type: Article

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