Enhanced sensing of nucleic acids with silicon nanowire field effect transistor biosensors

Nano Letters

Volumn 12, Issue 10, 2012, Pages 5262-5268

  Gao, Anran ^a   Lu, Na ^a,c   Wang, Yuchen ^b   Dai, Pengfei ^a   Li, Tie ^a   Gao, Xiuli ^a   Wang, Yuelin ^a   Fan, Chunhai ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b PEKING UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF APPLIED PHYSICS   (China)

Author keywords

biosensor; detection limit; SiNW FETs; ultrasensitive

Indexed keywords

ANALYTICAL RESULTS; BIOLOGICAL SPECIES; CURRENT RESPONSE; DETECTION LIMITS; DEVICE SENSITIVITY; FUNDAMENTAL FACTORS; HIGH SPECIFICITY; LABEL FREE; OPERATING PARAMETERS; RELIABLE DETECTION; SENSING MECHANISM; SENSOR PERFORMANCE; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; SINGLE NUCLEOTIDE POLYMORPHISMS; SINW-FETS; SUBTHRESHOLD; SYSTEMATIC STUDY; ULTRAHIGH SENSITIVITY; ULTRASENSITIVE;

BIOSENSORS; FIELD EFFECT TRANSISTORS; IONIC STRENGTH; NANOWIRES; NUCLEIC ACIDS; OPTIMIZATION; SENSORS;

ELECTRIC FIELD EFFECTS;

NANOWIRE; NUCLEIC ACID; SILICON;

ARTICLE; CHEMISTRY; DNA PROBE; GENETIC PROCEDURES; GENETICS; INSTRUMENTATION; NANOTECHNOLOGY; NUCLEIC ACID HYBRIDIZATION; OSMOLARITY; SEMICONDUCTOR; STATIC ELECTRICITY;

BIOSENSING TECHNIQUES; DNA PROBES; NANOTECHNOLOGY; NANOWIRES; NUCLEIC ACID HYBRIDIZATION; NUCLEIC ACIDS; OSMOLAR CONCENTRATION; SILICON; STATIC ELECTRICITY; TRANSISTORS, ELECTRONIC;

EID: 84867476412     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302476h     Document Type: Article

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