Ultralow-voltage transparent In2O3 nanowire electric-double-layer transistors

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 315-317

  Liu, Huixuan ^a,b   Sun, Jia ^b   Jiang, Jie ^b   Tang, Qingxin ^b   Wan, Qing ^a,b  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b HUNAN UNIVERSITY   (China)

Author keywords

Electric double layer (EDL); ion incorporated solid electrolytes; nanowire transistors

Indexed keywords

COMPOSITE SOLID ELECTROLYTES; DOUBLE LAYERS; ELECTRIC DOUBLE LAYER; FIELD-EFFECT MOBILITIES; GLASS SUBSTRATES; NANOWIRE TRANSISTORS; ROOM TEMPERATURE; SUBTHRESHOLD SLOPE; ULTRA-LOW-VOLTAGE;

ELECTRIC WIRE; ELECTROCHEMISTRY; FIELD EFFECT TRANSISTORS; NANOWIRES; SILICON COMPOUNDS; SUBSTRATES;

SOLID ELECTROLYTES;

EID: 79951951109     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2100075     Document Type: Article

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