Irradiation effects of high-energy proton beams on MoS2 field effect transistors

ACS Nano

Volumn 8, Issue 3, 2014, Pages 2774-2781

  Kim, Tae Young ^a   Cho, Kyungjune ^a   Park, Woanseo ^a   Park, Juhun ^a   Song, Younggul ^a   Hong, Seunghun ^a   Hong, Woong Ki ^b   Lee, Takhee ^a  

^a Seoul National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

electronic transport properties; field effect transistors; proton beam

Indexed keywords

FIELD EFFECT TRANSISTORS; INTERFACE STATES; MOLYBDENUM; MOLYBDENUM COMPOUNDS; PROTON BEAMS; PROTON IRRADIATION;

CURRENT LEVELS; ELECTRICAL CHARACTERISTIC; ELECTRONIC TRANSPORT PROPERTIES; HIGH ENERGY PROTON; HIGH-ENERGY PARTICLES; IRRADIATION EFFECT; MOLYBDENUM DISULFIDE; NANOELECTRONIC DEVICES;

ELECTRIC PROPERTIES;

EID: 84896921753     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4064924     Document Type: Article

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