Effect of dopant compensation on the temperature dependence of the transport properties in p-type monocrystalline silicon

Journal of Applied Physics

Volumn 115, Issue 8, 2014, Pages

  Veirman, J ^a   Martel, B ^a   Dubois, S ^a   Stendera, J ^a  

^a CEA LITEN DTS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER CONCENTRATION; HALL MOBILITY; HOLE MOBILITY; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

COMPENSATED SILICONS; COMPENSATION LEVEL; CZOCHRALSKI SILICON; DOPANT CONCENTRATIONS; EFFECT OF DOPANTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TEMPERATURE VARIATION;

MONOCRYSTALLINE SILICON;

EID: 84896751863     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4866695     Document Type: Article

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