Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Bruzzi, Mara ^a   Menichelli, David ^a   Scaringella, Monica ^a   Härkönen, Jaakko ^b   Tuovinen, Esa ^b   Li, Zheng ^c  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF HELSINKI   (Finland)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI SILICON; OXYGEN CONCENTRATION; SPACE CHARGE DENSITY; THERMALLY STIMULATED CURRENTS (TSC);

ACTIVATION ENERGY; ANNEALING; BORON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; SILICON;

MAGNETIC MATERIALS;

EID: 33646874848     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2192307     Document Type: Article

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