Advanced application of resistivity and Hall effect measurements to characterization of silicon

ECS Transactions

Volumn 25, Issue 3, 2009, Pages 25-34

  Voronkov, V V ^a   Voronkova, G I ^b   Batunina, A V ^b   Falster, R ^a  

^a MEMC Electronic Materials   (Italy)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; SILICON;

ADVANCED APPLICATIONS; BULK VALUE; HALL COEFFICIENT; HALL EFFECT MEASUREMENT; OPERATING ENERGIES; THERMAL DONOR;

HALL MOBILITY;

EID: 77649230336     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3204391     Document Type: Conference Paper

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