Study of bonding wire failure effects on external measurable signals of IGBT module

IEEE Transactions on Device and Materials Reliability

Volumn 14, Issue 1, 2014, Pages 83-89

  Kexin, Wei ^a,b   Mingxing, Du ^a,b   Linlin, Xie ^a   Jian, Li ^a  

^a TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

^b TIANJIN UNIVERSITY   (China)

Author keywords

Fault indicator; insulated gate bipolar transistors (IGBTs); semiconductor device reliability; Wire bond liftoff

Indexed keywords

ELECTRIC POWER SYSTEMS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

COLLECTOR-EMITTER VOLTAGE; EQUIVALENT CAPACITANCE; EXTERNAL CHARACTERISTIC; FAULT INDICATORS; PARASITIC INDUCTANCES; RELIABILITY BEHAVIOR; SEMICONDUCTOR DEVICE RELIABILITY; WIRE BONDS;

WIRE;

EID: 84896476165     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2012.2200485     Document Type: Article

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