Change of terminal characteristics of a voltage-source-inverter (VSI) due to semiconductor device degradation

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Xiang, Dawei ^a   Yang, Shaoyong ^b   Ran, Li ^a   Tavner, Peter ^a   Bryant, Angus ^b   Mawby, Philip ^b  

^a DURHAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Characterisation; Device modelling; IGBT; Reliability; Simulation; Voltage source inverter (VSI)

Indexed keywords

ACTIVE AREA; AGING EFFECTS; BOND WIRE; CHARACTERISATION; DEVICE MODELLING; DEVICE PARAMETERS; EXTERNAL CHARACTERISTIC; FALLING EDGE; INTERNAL PARAMETERS; INVERTER SYSTEM; OUTPUT CURRENT; OUTPUT VOLTAGES; PHYSICS-BASED; POWER MODULE; RELIABILITY SIMULATION; SIMULATION RESULT; SINGLE-CHIP MODULES; SOLDER FATIGUE; VOLTAGE SOURCE; VOLTAGE SOURCE INVERTER;

ACTIVE FILTERS; CONDITION MONITORING; DEGRADATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PHOTOLITHOGRAPHY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SIMULATORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 72949110658     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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