A time-domain physics-of-failure model for the lifetime prediction of wire bond interconnects

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1882-1886

  Yang, L ^a   Agyakwa, P A ^a   Johnson, C M ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BOND DEGRADATION; BONDING INTERFACES; DAMAGE ACCUMULATION; DAMAGE CONDITION; DAMAGE MODEL; EFFECT OF TEMPERATURE; LIFETIME PREDICTION; MODELING METHODOLOGY; PHYSICS-OF-FAILURE; RATE SENSITIVE; THERMAL EXPOSURE; TIME DOMAIN; TIME INTERVAL; TIME-DEPENDENT MATERIAL PROPERTIES; TIME-DOMAIN REPRESENTATION; WIRE BONDS;

DEGRADATION; ELECTRONICS PACKAGING; INTERFACES (MATERIALS); MATHEMATICAL MODELS;

WIRE;

EID: 80052916072     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.07.052     Document Type: Conference Paper

References (8)

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