-
1
-
-
67649225738
-
Graphene: Status and prospects
-
10.1126/science.1158877
-
Geim A K 2009 Graphene: status and prospects Science 324 1530-4
-
(2009)
Science
, vol.324
, pp. 1530-1534
-
-
Geim, A.K.1
-
2
-
-
60749097071
-
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
-
10.1038/nmat2382 1476-1122
-
Emtsev K V et al 2009 Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Nature Mater. 8 203-7
-
(2009)
Nature Mater.
, vol.8
, pp. 203-207
-
-
Emtsev, K.V.1
-
3
-
-
34249901916
-
Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy
-
DOI 10.1103/PhysRevLett.98.206802
-
Ohta T, Bostwick A, McChesney J L, Seyller T, Horn K and Rotenberg E 2007 Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy Phys. Rev. Lett. 98 206802 (Pubitemid 47139575)
-
(2007)
Physical Review Letters
, vol.98
, Issue.20
, pp. 206802
-
-
Ohta, T.1
Bostwick, A.2
McChesney, J.L.3
Seyller, T.4
Horn, K.5
Rotenberg, E.6
-
4
-
-
72049105359
-
Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation
-
10.1103/PhysRevLett.103.246804 246804
-
Riedl C, Coletti C, Iwasaki T, Zakharov A A and Starke U 2009 Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation Phys. Rev. Lett. 103 246804
-
(2009)
Phys. Rev. Lett.
, vol.103
-
-
Riedl, C.1
Coletti, C.2
Iwasaki, T.3
Zakharov, A.A.4
Starke, U.5
-
5
-
-
80052811376
-
Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation
-
10.1021/nl2019855
-
Robinson J A, Hollander M, LaBella M, Trumbull K A, Cavalero R and Snyder D W 2011 Epitaxial graphene transistors: enhancing performance via hydrogen intercalation Nano Lett. 11 3875-80
-
(2011)
Nano Lett.
, vol.11
, pp. 3875-3880
-
-
Robinson, J.A.1
Hollander, M.2
Labella, M.3
Trumbull, K.A.4
Cavalero, R.5
Snyder, D.W.6
-
6
-
-
84864864624
-
Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
-
10.1038/ncomms1955
-
Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Reshanov S, Schöner A, Krieger M and Weber H B 2012 Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics Nature Commun. 3 957
-
(2012)
Nature Commun.
, vol.3
, pp. 957
-
-
Hertel, S.1
Waldmann, D.2
Jobst, J.3
Albert, A.4
Albrecht, M.5
Reshanov, S.6
Schöner, A.7
Krieger, M.8
Weber, H.B.9
-
7
-
-
84872736838
-
Atomic covalent functionalization of graphene
-
10.1021/ar300143e 0001-4842
-
Johns J E and Hersam M C 2013 Atomic covalent functionalization of graphene Acc. Chem. Res. 46 77-86
-
(2013)
Acc. Chem. Res.
, vol.46
, pp. 77-86
-
-
Johns, J.E.1
Hersam, M.C.2
-
8
-
-
77949958392
-
Bandgap opening in graphene induced by patterned hydrogen adsorption
-
10.1038/nmat2710 1476-1122
-
Balog R et al 2010 Bandgap opening in graphene induced by patterned hydrogen adsorption Nature Mater. 9 315-9
-
(2010)
Nature Mater.
, vol.9
, pp. 315-319
-
-
Balog, R.1
-
9
-
-
77956450706
-
Tunable band gap in hydrogenated quasi-free-standing graphene
-
10.1021/nl101066m
-
Haberer D et al 2010 Tunable band gap in hydrogenated quasi-free-standing graphene Nano Lett. 10 3360-6
-
(2010)
Nano Lett.
, vol.10
, pp. 3360-3366
-
-
Haberer, D.1
-
10
-
-
84861594903
-
Reversible hydrogenation of deuterium-intercalated quasi-free-standing graphene on SiC(0 0 0 1)
-
10.1103/PhysRevB.85.201401 B 201401
-
Bocquet F C, Bisson R, Themlin J-M, Layet J-M and Angot T 2012 Reversible hydrogenation of deuterium-intercalated quasi-free-standing graphene on SiC(0 0 0 1) Phys. Rev. B 85 201401
-
(2012)
Phys. Rev.
, vol.85
-
-
Bocquet, F.C.1
Bisson, R.2
Themlin, J.-M.3
Layet, J.-M.4
Angot, T.5
-
11
-
-
84868146130
-
Revealing the atomic structure of the buffer layer between SiC(0 0 0 1) and epitaxial graphene
-
10.1016/j.carbon.2012.08.050
-
Goler S et al 2013 Revealing the atomic structure of the buffer layer between SiC(0 0 0 1) and epitaxial graphene Carbon 51 249-54
-
(2013)
Carbon
, vol.51
, pp. 249-254
-
-
Goler, S.1
-
12
-
-
78249233540
-
Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): A review of growth, characterization, transfer doping and hydrogen intercalation
-
10.1088/0022-3727/43/37/374009 0022-3727 374009
-
Riedl C, Coletti C and Starke U 2010 Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation J. Phys. D: Appl. Phys. 43 374009
-
(2010)
J. Phys. D: Appl. Phys.
, vol.43
, Issue.37
-
-
Riedl, C.1
Coletti, C.2
Starke, U.3
-
13
-
-
2442687079
-
Passivation of hexagonal SiC surfaces by hydrogen termination
-
10.1088/0953-8984/16/17/016 0953-8984 016
-
Seyller T 2004 Passivation of hexagonal SiC surfaces by hydrogen termination J. Phys.: Condens. Matter 16 S1755
-
(2004)
J. Phys.: Condens. Matter
, vol.16
, Issue.17
, pp. 1755
-
-
Seyller, T.1
-
14
-
-
80053921764
-
Large-area homogeneous quasifree standing epitaxial graphene on SiC(0 0 0 1): Electronic and structural characterization
-
10.1103/PhysRevB.84.125449 B 125449
-
Forti S, Emtsev K V, Coletti C, Zakharov A A, Riedl C and Starke U 2011 Large-area homogeneous quasifree standing epitaxial graphene on SiC(0 0 0 1): electronic and structural characterization Phys. Rev. B 84 125449
-
(2011)
Phys. Rev.
, vol.84
-
-
Forti, S.1
Emtsev, K.V.2
Coletti, C.3
Zakharov, A.A.4
Riedl, C.5
Starke, U.6
-
15
-
-
0000766003
-
Stationary and non-stationary etching of Si(1 0 0) surfaces with gas phase and adsorbed hydrogen
-
10.1016/S0009-2614(00)00268-2 0009-2614
-
Dinger A, Lutterloh C and Küppers J 2000 Stationary and non-stationary etching of Si(1 0 0) surfaces with gas phase and adsorbed hydrogen Chem. Phys. Lett. 320 405-10
-
(2000)
Chem. Phys. Lett.
, vol.320
, pp. 405-410
-
-
Dinger, A.1
Lutterloh, C.2
Küppers, J.3
-
16
-
-
0035932181
-
Interaction of hydrogen atoms with Si(111) surfaces: Adsorption, abstraction, and etching
-
DOI 10.1063/1.1351158
-
Dinger A, Lutterloh C and Küppers J 2001 Interaction of hydrogen atoms with Si(1 1 1) surfaces: adsorption, abstraction, and etching J. Chem. Phys. 114 5338-50 (Pubitemid 32380686)
-
(2001)
Journal of Chemical Physics
, vol.114
, Issue.12
, pp. 5338-5350
-
-
Dinger, A.1
Lutterloh, C.2
Kuppers, J.3
-
17
-
-
3843060886
-
Novel reconstruction mechanism for dangling-bond minimization: Combined method surface structure determination of SiC(111)-(3×3)
-
Starke U, Schardt J, Bernhardt J, Franke M, Reuter K, Wedler H, Heinz K, Furthmüller J, Käckell P and Bechstedt F 1998 Novel reconstruction mechanism for dangling-bond minimization: combined method surface structure determination of SiC(1 1 1)-(3 × 3) Phys. Rev. Lett. 80 758-61 (Pubitemid 128623855)
-
(1998)
Physical Review Letters
, vol.80
, Issue.4
, pp. 758-761
-
-
Starke, U.1
Schardt, J.2
Bernhardt, J.3
Franke, M.4
Reuter, K.5
Wedler, H.6
Heinz, K.7
Furthmuller, J.8
Kackell, P.9
Bechstedt, F.10
-
18
-
-
0034667044
-
Crystallography of the (3×3) surface reconstruction of 3C-SiC(111), 4H-SiC(0001), and 6H-SiC(0001) surfaces retrieved by low-energy electron diffraction
-
DOI 10.1103/PhysRevB.62.10335
-
Schardt J, Bernhardt J, Starke U and Heinz K 2000 Crystallography of the (3 × 3) surface reconstruction of 3C-SiC(1 1 1), 4H-SiC(0 0 0 1), and 6H-SiC(0 0 0 1) surfaces retrieved by low-energy electron diffraction Phys. Rev. B 62 10335-44 (Pubitemid 32332498)
-
(2000)
Physical Review B - Condensed Matter and Materials Physics
, vol.62
, Issue.15
, pp. 10335-10344
-
-
Schardt, J.1
Bernhardt, J.2
Starke, U.3
Heinz, K.4
-
19
-
-
0034504077
-
Reassessment of core-level photoemission spectra of reconstructed SiC(0 0 0 1) surfaces
-
DOI 10.1016/S0039-6028(00)00841-4
-
Tautz F, Sloboshanin S, Starke U and Schaefer J 2000 Reassessment of core-level photoemission spectra of reconstructed SiC(0 0 0 1) surfaces Surf. Sci. 470 L25-31 (Pubitemid 32077275)
-
(2000)
Surface Science
, vol.470
, Issue.1-2
-
-
Tautz, F.S.1
Sloboshanin, S.2
Starke, U.3
Schaefer, J.A.4
-
20
-
-
0034317022
-
Deuterium etching of the Si-rich SiC(0001) (3×3) surface reconstruction
-
DOI 10.1016/S0039-6028(00)00761-5
-
Stoldt C R, Carraro C and Maboudian R 2000 Deuterium etching of the Si-rich SiC(0 0 0 1) (3 × 3) surface reconstruction Surf. Sci. 466 66-72 (Pubitemid 32033439)
-
(2000)
Surface Science
, vol.466
, Issue.1-3
, pp. 66-72
-
-
Stoldt, C.R.1
Carraro, C.2
Maboudian, R.3
-
21
-
-
69949165334
-
Hydrogen desorption from 6H-SiC(0 0 0 1) surfaces during graphitization
-
10.1063/1.3223598 094103
-
Aoki Y and Hirayama H 2009 Hydrogen desorption from 6H-SiC(0 0 0 1) surfaces during graphitization Appl. Phys. Lett. 95 094103
-
(2009)
Appl. Phys. Lett.
, vol.95
-
-
Aoki, Y.1
Hirayama, H.2
-
22
-
-
0003027841
-
Oxidation of clean and H-terminated SiC surfaces
-
10.1016/S0921-5107(96)02007-7 0921-5107 B
-
Van Elsbergen V, Janzen O and Mönch W 1997 Oxidation of clean and H-terminated SiC surfaces Mater. Sci. Eng. B 46 366-9
-
(1997)
Mater. Sci. Eng.
, vol.46
, pp. 366-369
-
-
Van Elsbergen, V.1
Janzen, O.2
Mönch, W.3
-
23
-
-
0035919023
-
STM and LEED observation of hydrogen adsorption on the 6H-SiC(0 0 0 1)3 × 3 surface
-
DOI 10.1016/S0039-6028(01)00765-8, PII S0039602801007658
-
Takami J, Naitoh M, Yokoh I, Nishigaki S and Toyama N 2001 STM and LEED observation of hydrogen adsorption on the 6H-SiC(0 0 0 1)3 × 3 surface Surf. Sci. 482-485 359-64 (Pubitemid 32615643)
-
(2001)
Surface Science
, vol.482-485
, Issue.PART 1
, pp. 359-364
-
-
Takami, J.1
Naitoh, M.2
Yokoh, I.3
Nishigaki, S.4
Toyama, N.5
-
24
-
-
0037318603
-
6H- and 4H-SiC(0 0 0 1) Si Surface richness dosing by hydrogen etching: A way to reduce the formation temperature of reconstructions
-
10.1142/S0218625X03004652 0218-625X
-
Diani M, Diouri J, Kubler L, Simon L, Aubel D and Bolmont D 2003 6H- AND 4H-SiC(0 0 0 1) Si Surface richness dosing by hydrogen etching: a way to reduce the formation temperature of reconstructions Surf. Rev. Lett. 10 55-63
-
(2003)
Surf. Rev. Lett.
, vol.10
, pp. 55-63
-
-
Diani, M.1
Diouri, J.2
Kubler, L.3
Simon, L.4
Aubel, D.5
Bolmont, D.6
-
25
-
-
36149018933
-
Optical modes of vibration in an ionic crystal slab
-
10.1103/PhysRev.140.A2076
-
Fuchs R and Kliewer K L 1965 Optical modes of vibration in an ionic crystal slab Phys. Rev. 140 A2076-88
-
(1965)
Phys. Rev.
, vol.140
-
-
Fuchs, R.1
Kliewer, K.L.2
-
26
-
-
33745888112
-
Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center
-
DOI 10.1016/j.susc.2006.05.031, PII S0039602806006455
-
Balster T, Tautz F S, Polyakov V M, Ibach H, Sloboshanin S, Öttking R and Schaefer J A 2006 Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center Surf. Sci. 600 2886-93 (Pubitemid 44041029)
-
(2006)
Surface Science
, vol.600
, Issue.14
, pp. 2886-2893
-
-
Balster, T.1
Tautz, F.S.2
Polyakov, V.M.3
Ibach, H.4
Sloboshanin, S.5
Ottking, R.6
Schaefer, J.A.7
-
27
-
-
0001610270
-
Stacking transformation from hexagonal to cubic sic induced by surface reconstruction: A seed for heterostructure growth
-
Starke U, Schardt J, Bernhardt J, Franke M and Heinz K 1999 Stacking transformation from hexagonal to cubic SiC induced by surface reconstruction: a seed for heterostructure growth Phys. Rev. Lett. 82 2107-10 (Pubitemid 129580703)
-
(1999)
Physical Review Letters
, vol.82
, Issue.10
, pp. 2107-2110
-
-
Starke, U.1
Schardt, J.2
Bernhardt, J.3
Franke, M.4
Heinz, K.5
-
28
-
-
0000911679
-
Theory of the adatom-induced reconstruction of the SiC(0 0 0 1) surface
-
10.1103/PhysRevB.52.R17001 0163-1829 B
-
Northrup J E and Neugebauer J 1995 Theory of the adatom-induced reconstruction of the SiC(0 0 0 1) surface Phys. Rev. B 52 R17001-4
-
(1995)
Phys. Rev.
, vol.52
-
-
Northrup, J.E.1
Neugebauer, J.2
-
29
-
-
33748446944
-
Surface phonons of clean, hydrogen- and deuterium-terminated Si(0 0 1) surfaces
-
DOI 10.1016/j.susc.2006.06.030, PII S0039602806007448
-
Eremtchenko M, Tautz F S, Ottking R and Schaefer J A 2006 Surface phonons of clean, hydrogen- and deuterium-terminated Si(0 0 1) surfaces Surf. Sci. 600 3446-55 (Pubitemid 44348997)
-
(2006)
Surface Science
, vol.600
, Issue.17
, pp. 3446-3455
-
-
Eremtchenko, M.1
Tautz, F.S.2
Ottking, R.3
Schaefer, J.A.4
-
30
-
-
18244419168
-
Observation of hydrogen adsorption on 6H-SiC(0 0 0 1) surface
-
DOI 10.1016/S0169-4332(00)00755-8
-
Fujino T, Fuse T, Ryu J-T, Inudzuka K, Yamazaki Y, Katayama M and Oura K 2001 Observation of hydrogen adsorption on 6H-SiC(0 0 0 1) surface Appl. Surf. Sci. 169-170 113-6 (Pubitemid 32195545)
-
(2001)
Applied Surface Science
, vol.169-170
, pp. 113-116
-
-
Fujino, T.1
Fuse, T.2
Ryu, J.-T.3
Inudzuka, K.4
Yamazaki, Y.5
Katayama, M.6
Oura, K.7
-
31
-
-
0032534419
-
Ultimate resolution electron energy loss spectroscopy at H/Si(100) surfaces
-
Tautz F S and Schaefer J A 1998 Ultimate resolution electron energy loss spectroscopy at H/Si(1 0 0) surfaces J. Appl. Phys. 84 6636-43 (Pubitemid 128622367)
-
(1998)
Journal of Applied Physics
, vol.84
, Issue.12
, pp. 6636-6643
-
-
Tautz, F.S.1
Schaefer, J.A.2
-
33
-
-
77955976701
-
Epitaxial graphene on SiC(0 0 0 1): More than just honeycombs
-
10.1103/PhysRevLett.105.085502 085502
-
Qi Y, Rhim S H, Sun G F, Weinert M and Li L 2010 Epitaxial graphene on SiC(0 0 0 1): more than just honeycombs Phys. Rev. Lett. 105 085502
-
(2010)
Phys. Rev. Lett.
, vol.105
-
-
Qi, Y.1
Rhim, S.H.2
Sun, G.F.3
Weinert, M.4
Li, L.5
-
34
-
-
80053412945
-
The quasi-free-standing nature of graphene on H-saturated SiC(0 0 0 1)
-
10.1063/1.3643034 122106
-
Speck F, Jobst J, Fromm F, Ostler M, Waldmann D, Hundhausen M, Weber H B and Seyller T 2011 The quasi-free-standing nature of graphene on H-saturated SiC(0 0 0 1) Appl. Phys. Lett. 99 122106
-
(2011)
Appl. Phys. Lett.
, vol.99
-
-
Speck, F.1
Jobst, J.2
Fromm, F.3
Ostler, M.4
Waldmann, D.5
Hundhausen, M.6
Weber, H.B.7
Seyller, T.8
-
35
-
-
77950381724
-
Band engineering and magnetic doping of epitaxial graphene on SiC (0 0 0 1)
-
10.1103/PhysRevLett.104.146801 146801
-
Jayasekera T, Kong B D, Kim K W and Buongiorno Nardelli M 2010 Band engineering and magnetic doping of epitaxial graphene on SiC (0 0 0 1) Phys. Rev. Lett. 104 146801
-
(2010)
Phys. Rev. Lett.
, vol.104
-
-
Jayasekera, T.1
Kong, B.D.2
Kim, K.W.3
Buongiorno Nardelli, M.4
-
36
-
-
77954867090
-
First-principles study of preferential sites of hydrogen incorporated in epitaxial graphene on 6H-SiC(0 0 0 1)
-
10.1103/PhysRevB.81.075432 B 075432
-
Lee B, Han S and Kim Y-S 2010 First-principles study of preferential sites of hydrogen incorporated in epitaxial graphene on 6H-SiC(0 0 0 1) Phys. Rev. B 81 075432
-
(2010)
Phys. Rev.
, vol.81
-
-
Lee, B.1
Han, S.2
Kim, Y.-S.3
-
37
-
-
84855392378
-
Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0 0 0 1)
-
10.1103/PhysRevB.84.235426 B 235426
-
Deretzis I and La Magna A 2011 Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0 0 0 1) Phys. Rev. B 84 235426
-
(2011)
Phys. Rev.
, vol.84
-
-
Deretzis, I.1
La Magna, A.2
-
38
-
-
84864627819
-
First-principles study of hydrogen and fluorine intercalation into graphene-SiC(0 0 0 1) interface
-
10.1103/PhysRevB.86.045453 B 045453
-
Markevich A, Jones R, Öberg S, Rayson M J, Goss J P and Briddon P R 2012 First-principles study of hydrogen and fluorine intercalation into graphene-SiC(0 0 0 1) interface Phys. Rev. B 86 045453
-
(2012)
Phys. Rev.
, vol.86
-
-
Markevich, A.1
Jones, R.2
Öberg, S.3
Rayson, M.J.4
Goss, J.P.5
Briddon, P.R.6
-
39
-
-
41549157259
-
Interaction, growth, and ordering of epitaxial graphene on SiC{0 0 0 1} surfaces: A comparative photoelectron spectroscopy study
-
10.1103/PhysRevB.77.155303 B 155303
-
Emtsev K V, Speck F, Seyller T, Ley L and Riley J D 2008 Interaction, growth, and ordering of epitaxial graphene on SiC{0 0 0 1} surfaces: a comparative photoelectron spectroscopy study Phys. Rev. B 77 155303
-
(2008)
Phys. Rev.
, vol.77
-
-
Emtsev, K.V.1
Speck, F.2
Seyller, T.3
Ley, L.4
Riley, J.D.5
-
40
-
-
67650305953
-
Tunneling spectroscopy of graphene and related reconstructions on SiC(0 0 0 1)
-
10.1116/1.3071977 0734-2101 A
-
Nie S and Feenstra R M 2009 Tunneling spectroscopy of graphene and related reconstructions on SiC(0 0 0 1) J. Vac. Sci. Technol. A 27 1052
-
(2009)
J. Vac. Sci. Technol.
, vol.27
, pp. 1052
-
-
Nie, S.1
Feenstra, R.M.2
-
41
-
-
65249165307
-
Exposure of epitaxial graphene on SiC(0 0 0 1) to atomic hydrogen
-
10.1021/nl803331q
-
Guisinger N P, Rutter G M, Crain J N, First P N and Stroscio J A 2009 Exposure of epitaxial graphene on SiC(0 0 0 1) to atomic hydrogen Nano Lett. 9 1462-6
-
(2009)
Nano Lett.
, vol.9
, pp. 1462-1466
-
-
Guisinger, N.P.1
Rutter, G.M.2
Crain, J.N.3
First, P.N.4
Stroscio, J.A.5
-
42
-
-
0037940073
-
The dielectric theory of HREELS, a short survey
-
10.1016/S0368-2048(03)00079-3 0368-2048
-
Lambin P, Henrard L, Thiry P, Silien C and Vigneron J P 2003 The dielectric theory of HREELS, a short survey J. Electron Spectrosc. Relat. Phenom. 129 281-92
-
(2003)
J. Electron Spectrosc. Relat. Phenom.
, vol.129
, pp. 281-292
-
-
Lambin, P.1
Henrard, L.2
Thiry, P.3
Silien, C.4
Vigneron, J.P.5
-
43
-
-
78650387900
-
Controlling hydrogenation of graphene on transition metals
-
10.1021/jp106361y 1932-7447 C
-
Ng M L, Balog R, Hornekær L, Preobrajenski A B, Vinogradov N A, Mårtensson N and Schulte K 2010 Controlling hydrogenation of graphene on transition metals J. Phys. Chem. C 114 18559-65
-
(2010)
J. Phys. Chem.
, vol.114
, pp. 18559-18565
-
-
Ng, M.L.1
Balog, R.2
Hornekær, L.3
Preobrajenski, A.B.4
Vinogradov, N.A.5
Mårtensson, N.6
Schulte, K.7
-
44
-
-
5744223203
-
Adsorption of D(H) atoms on Ar ion bombarded (0 0 0 1) graphite surfaces
-
10.1016/j.susc.2004.07.049 0039-6028
-
Guttler A, Zecho T and Küppers J 2004 Adsorption of D(H) atoms on Ar ion bombarded (0 0 0 1) graphite surfaces Surf. Sci. 570 218-26
-
(2004)
Surf. Sci.
, vol.570
, pp. 218-226
-
-
Guttler, A.1
Zecho, T.2
Küppers, J.3
-
45
-
-
45849144371
-
Investigation of D(H) abstraction by means of high resolution electron energy loss spectroscopy
-
10.1016/j.susc.2008.05.012 0039-6028
-
Thomas C, Angot T and Layet J M 2008 Investigation of D(H) abstraction by means of high resolution electron energy loss spectroscopy Surf. Sci. 602 2311-4
-
(2008)
Surf. Sci.
, vol.602
, pp. 2311-2314
-
-
Thomas, C.1
Angot, T.2
Layet, J.M.3
-
46
-
-
0020156743
-
Direct verification of hydrogen termination of the semiconducting diamond(1 1 1) surface
-
10.1116/1.571782 0022-5355
-
Waclawski B J, Pierce D T, Swanson N and Celotta R J 1982 Direct verification of hydrogen termination of the semiconducting diamond(1 1 1) surface J. Vac. Sci. Technol. 21 368-70
-
(1982)
J. Vac. Sci. Technol.
, vol.21
, pp. 368-370
-
-
Waclawski, B.J.1
Pierce, D.T.2
Swanson, N.3
Celotta, R.J.4
-
47
-
-
0000503148
-
High-resolution electron-energy-loss spectroscopic study of epitaxially grown diamond (1 1 1) and (1 0 0) surfaces
-
10.1103/PhysRevB.48.18348 0163-1829 B
-
Aizawa T, Ando T, Kamo M and Sato Y 1993 High-resolution electron-energy-loss spectroscopic study of epitaxially grown diamond (1 1 1) and (1 0 0) surfaces Phys. Rev. B 48 18348-51
-
(1993)
Phys. Rev.
, vol.48
, pp. 18348-18351
-
-
Aizawa, T.1
Ando, T.2
Kamo, M.3
Sato, Y.4
-
48
-
-
0000945160
-
Adsorption and abstraction of hydrogen on polycrystalline diamond
-
10.1063/1.466740
-
Thoms B D, Russell J N, Pehrsson P E and Butler J E 1994 Adsorption and abstraction of hydrogen on polycrystalline diamond J. Chem. Phys. 100 8425-31
-
(1994)
J. Chem. Phys.
, vol.100
, pp. 8425-8431
-
-
Thoms, B.D.1
Russell, J.N.2
Pehrsson, P.E.3
Butler, J.E.4
-
49
-
-
30244530884
-
A vibrational study of the adsorption and desorption of hydrogen on polycrystalline diamond
-
10.1063/1.356373
-
Thoms B D, Pehrsson P E and Butler J E 1994 A vibrational study of the adsorption and desorption of hydrogen on polycrystalline diamond J. Appl. Phys. 75 1804-10
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 1804-1810
-
-
Thoms, B.D.1
Pehrsson, P.E.2
Butler, J.E.3
-
50
-
-
84860280351
-
Carbon rehybridization at the graphene/SiC(0 0 0 1) interface: Effect on stability and atomic-scale corrugation
-
10.1103/PhysRevB.85.161405 B 161405
-
Sclauzero G and Pasquarello A 2012 Carbon rehybridization at the graphene/SiC(0 0 0 1) interface: effect on stability and atomic-scale corrugation Phys. Rev. B 85 161405
-
(2012)
Phys. Rev.
, vol.85
-
-
Sclauzero, G.1
Pasquarello, A.2
-
51
-
-
84874533998
-
Atomic surface structure of graphene and its buffer layer on SiC(0 0 0 1): A chemical-specific photoelectron diffraction approach
-
10.1103/PhysRevB.87.081403 B 081403
-
De Lima L H, de Siervo A, Landers R, Viana G A, Goncalves A M B, Lacerda R G and Häberle P 2013 Atomic surface structure of graphene and its buffer layer on SiC(0 0 0 1): a chemical-specific photoelectron diffraction approach Phys. Rev. B 87 081403
-
(2013)
Phys. Rev.
, vol.87
-
-
De Lima, L.H.1
De Siervo, A.2
Landers, R.3
Viana, G.A.4
Goncalves, A.M.B.5
Lacerda, R.G.6
Häberle, P.7
-
52
-
-
33646344488
-
Metastable structures and recombination pathways for atomic hydrogen on the graphite (0001) surface
-
DOI 10.1103/PhysRevLett.96.156104
-
Hornekaer L, Sljivancanin Z, Xu W, Otero R, Rauls E, Stensgaard I, Laegsgaard E, Hammer B and Besenbacher F 2006 Metastable structures and recombination pathways for atomic hydrogen on the graphite (0 0 0 1) surface Phys. Rev. Lett. 96 156104 (Pubitemid 43671445)
-
(2006)
Physical Review Letters
, vol.96
, Issue.15
, pp. 156104
-
-
Hornekaer, L.1
Sljivancanin, Z.2
Xu, W.3
Otero, R.4
Rauls, E.5
Stensgaard, I.6
Laegsgaard, E.7
Hammer, B.8
Besenbacher, F.9
-
53
-
-
79960709294
-
Hydrogen intercalation of graphene grown on 6H-SiC(0 0 0 1)
-
10.1016/j.susc.2010.12.018 0039-6028
-
Watcharinyanon S, Virojanadara C, Osiecki J R, Zakharov A A, Yakimova R, Uhrberg R I G and Johansson L I 2011 Hydrogen intercalation of graphene grown on 6H-SiC(0 0 0 1) Surf. Sci. 605 1662-8
-
(2011)
Surf. Sci.
, vol.605
, pp. 1662-1668
-
-
Watcharinyanon, S.1
Virojanadara, C.2
Osiecki, J.R.3
Zakharov, A.A.4
Yakimova, R.5
Uhrberg, R.I.G.6
Johansson, L.I.7
-
54
-
-
9644280062
-
Graphitization of the 6H-SiC(0 0 0 1) surface studied by HREELS
-
DOI 10.1016/S0039-6028(01)01902-1, PII S0039602801019021
-
Angot T, Portail M, Forbeaux I and Layet J M 2002 Graphitization of the 6H-SiC(0 0 0 1) surface studied by HREELS Surf. Sci. 502-503 81-5 (Pubitemid 34306480)
-
(2002)
Surface Science
, vol.502-503
, pp. 81-85
-
-
Angot, T.1
Portail, M.2
Forbeaux, I.3
Layet, J.M.4
-
55
-
-
63049097845
-
Graphitization process of SiC(0 0 0 1) studied by electron energy loss spectroscopy
-
10.1063/1.3100776 112106
-
Langer T, Pfnür H, Schumacher H W and Tegenkamp C 2009 Graphitization process of SiC(0 0 0 1) studied by electron energy loss spectroscopy Appl. Phys. Lett. 94 112106
-
(2009)
Appl. Phys. Lett.
, vol.94
-
-
Langer, T.1
Pfnür, H.2
Schumacher, H.W.3
Tegenkamp, C.4
-
56
-
-
70350607979
-
Plasmon dispersion on epitaxial graphene studied using high-resolution electron energy-loss spectroscopy
-
10.1103/PhysRevB.80.113410 B 113410
-
Lu J, Loh K P, Huang H, Chen W and Wee A T S 2009 Plasmon dispersion on epitaxial graphene studied using high-resolution electron energy-loss spectroscopy Phys. Rev. B 80 113410
-
(2009)
Phys. Rev.
, vol.80
-
-
Lu, J.1
Loh, K.P.2
Huang, H.3
Chen, W.4
Wee, A.T.S.5
-
57
-
-
59149091893
-
Control of graphene's properties by reversible hydrogenation: Evidence for graphane
-
10.1126/science.1167130
-
Elias D C et al 2009 Control of graphene's properties by reversible hydrogenation: evidence for graphane Science 323 610-3
-
(2009)
Science
, vol.323
, pp. 610-613
-
-
Elias, D.C.1
-
58
-
-
84864473432
-
Elastic properties of a macroscopic graphene sample from phonon dispersion measurements
-
10.1016/j.carbon.2012.06.019
-
Politano A, Marino A R, Campi D, Farías D, Miranda R and Chiarello G 2012 Elastic properties of a macroscopic graphene sample from phonon dispersion measurements Carbon 50 4903-10
-
(2012)
Carbon
, vol.50
, pp. 4903-4910
-
-
Politano, A.1
Marino, A.R.2
Campi, D.3
Farías, D.4
Miranda, R.5
Chiarello, G.6
-
59
-
-
84857402942
-
Phonon dispersion of quasi-freestanding graphene on Pt(1 1 1)
-
10.1088/0953-8984/24/10/104025 0953-8984 104025
-
Politano A, Marino A R and Chiarello G 2012 Phonon dispersion of quasi-freestanding graphene on Pt(1 1 1) J. Phys.: Condens. Matter 24 104025
-
(2012)
J. Phys.: Condens. Matter
, vol.24
, Issue.10
-
-
Politano, A.1
Marino, A.R.2
Chiarello, G.3
-
60
-
-
0030141254
-
High resolution electron energy loss spectroscopy study of the Si(001) 3 × 1 hydrogenated surface
-
DOI 10.1016/0039-6028(95)01169-2
-
Angot T, Bolmont D and Koulmann J J 1996 High resolution electron energy loss spectroscopy study of the Si(0 0 1) 3 × 1 hydrogenated surface Surf. Sci. 352-354 401-6 (Pubitemid 126369285)
-
(1996)
Surface Science
, vol.352-354
, pp. 401-406
-
-
Angot, T.1
Bolmont, D.2
Koulmann, J.J.3
|