A 0.8 THz fMAX SiGe HBT operating at 4.3 K

IEEE Electron Device Letters

Volumn 35, Issue 2, 2014, Pages 151-153

  Chakraborty, Partha S ^a   Cardoso, Adilson S ^a   Wier, Brian R ^a   Omprakash, Anup P ^a   Cressler, John D ^a   Kaynak, Mehmet ^b   Tillack, Bernd ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IHP   (Germany)

Author keywords

BiCMOS; Cryogenic; SiGe HBT; terahertz

Indexed keywords

AC PERFORMANCE; BI-CMOS; CRYOGENIC TEMPERATURES; ROOM-TEMPERATURE OPERATION; SIGE HBTS; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; TERA HERTZ;

CRYOGENICS; SEMICONDUCTING SILICON;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84893828735     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2295214     Document Type: Article

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