SiGe HBT CML ring oscillator with 2.3-ps gate delay at cryogenic temperatures

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 1183-1187

  Yuan, Jiahui ^a   Moen, Kurt A ^b   Cressler, John D ^b   Rücker, Holger ^c   Heinemann, Bernd ^c   Winkler, Wolfgang ^d  

^a SanDisk Corporation   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IHP   (Germany)

^d SILICON RADAR GMBH   (Germany)

Author keywords

Cryogenic temperatures; Heterojunction bipolar transistor (HBT); Ring oscillator; SiGe HBTs; Silicon germanium (SiGe)

Indexed keywords

BASE RESISTANCE; COLLECTOR-BASE CAPACITANCE; CRYOGENIC TEMPERATURES; GATE DELAYS; MEASURED CURRENTS; RING OSCILLATOR; SELF-HEATING; SIGE HBTS; SILICON GERMANIUM; SILICON-BASED TECHNOLOGY; SWITCHING SPEED;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CRYOGENICS; CUTOFF FREQUENCY; DELAY CIRCUITS; DIGITAL INTEGRATED CIRCUITS; GERMANIUM; HETEROJUNCTIONS; OPTICAL DEVICES; OSCILLATORS (ELECTRONIC); SILICON ALLOYS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77951622673     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2042769     Document Type: Article

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