Investigation of SiGe HBT potentialities under cryogenic temperature

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 121-124

  Waldhoff, Nicolas ^a   Danneville, François ^a   Dambrine, Gilles ^a   Geynet, Boris ^b   Chevalier, Pascal ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC TEMPERATURES; EQUIVALENT MODEL; MINIMUM NOISE FIGURE; NOISE MODELS; NOISE PERFORMANCE; SI/SIGE; SIGE HBTS; SMALL SIGNAL;

BIPOLAR TRANSISTORS; CRYOGENICS; CUTOFF FREQUENCY; HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 72849151164     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331374     Document Type: Conference Paper

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