2-D analysis of device parasitics for 800/1000 GHz fT/f max SiGe HBT

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2005, Pages 252-255

  Shi, Yun ^a   Niu, Guofu ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SILICON COMPOUNDS;

ENERGY BALANCE SIMULATIONS; REGIONAL PARASITIC ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 27944432601     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. G. Freeman, et al., IEEE Trans. on Electron Devices, p. 645, Mar. 2003.
2. P. Chevalier, et al., IEEE Proc. BCTM, p. 225, 2004.
3. H. Rucker, et al., IEDM Tech. Dig., p. 121, 2004.
4. Y. Shi and G. Niu, IEEE Proc. BCTM, p. 213, 2004.
5. G. Freeman, et al., The Silicon Heterostructure Handbook, in press.
6. U. Pfeiffer, et al., IEEE Trans. MTT, to be published.
7. J. Pan, et al., IEEE Proc. BCTM, p. 209, 2004.
8. J. D. Cressler and G. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House.