Theoretical and experimental characterization of self-heating in silicon integrated devices operating at low temperatures

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 1098-1106

  De La Hidalga, F J ^a   Jamal Deen, M ^a   Gutierrez E A ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

Cryogenic electronics; Integrated circuits thermal factors; Mosfet's; Resistance heating; Self heating; Silicon; Temperature measurement

Indexed keywords

EID: 0001732618     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841246     Document Type: Article

References (27)

1. B. Dierickx, "Transient phenomena and noise in silicon MOSFET's at cryogenic temperatures," Ph.D. dissertation, Katholieke Univ. Leuven, Belgium, 1990.
2. J. Wolf, U. Grözinger, and D. Lemke, "Cryogenic readout electronics for the infrared space observatory ISO," in Low Temperature Electronics and High Temperature Superconductivity/1995, ser. Electrochem. Soc. Proc. Ser., C. Claeys, S.I. Raider, R. K. Kirschman, and W. D. Brown, Eds. Pennington, NJ, 1995, pp. 355-368.
3. E.A. Gutiérrez, "Electrical performance of submicron CMOS technologies from 300K to 4.2K," Ph.D. dissertation, Katholieke Univ. Leuven, Belgium, 1993.
4. Y.S. Touloukian, R. W. Powell, C. Y. Ho, and P. G. Clemens, Thermophysical Properties of Matter, ser. TPRC Data Ser.. New York: IFI/Plenum, 1970, vol. 1/2.
5. J. Callaway, "Model for lattice thermal conductivity at low temperature," Phys. Rev., vol. 113, pp. 1046-1051, 1959.
6. -, "Low-temperature lattice thermal conductivity," Phys. Rev. , vol. 122, pp. 787-790, 1961.
7. C.J. Glassbrenner and G. A. Slack, "Thermal conductivity of silicon and germanium from 3K to the melting point," Phys. Rev. A, vol. 134, pp. A1058-A1069, 1964.
8. P.D. Maycock, "Thermal conductivity of silicon, germanium and III-V alloys," Solid-State Electron., vol. 10, pp. 161-168, 1967.
9. J.P. McKelvey, Solid State and Semiconductor Physics. New York: Harper and Row, 1966.
10. F.J. De la Hidalga, "Low temperature modeling and simulation of semiconductor devices," Ph.D. dissertation, INAOE, Puebla, Mexico, 1998.
11. E.A. Gutiérrez, D. L. Deferm, and G. Declerck, "Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambient," IEEE Trans. Electron Device Lett., vol. 14, pp. 152-154, 1993.
12. S.S. Sesnic and G. R. Craig, "Thermal effects in JFET and MOSFET devices at cryogenic temperatures," IEEE Trans. Electron Devices, vol. 19, pp. 933-942, 1972.
13. D.P. Foty and S. L. Titcomb, "Thermal effects in n-channel enhancement MOSFET's operated at cryogenic temperatures," IEEE Trans. Electron Devices, vol. ED-34, pp. 107-113, Jan. 1987.
14. D.P. Foty, "Thermal effects in p-channel MOSFET's at low temperatures," IEEE Trans. Electron Devices, vol. 36, pp. 1542-1544, 1989.
15. E.A. Gutiérrez, D. L. Deferm, and G. Declerck, "Self-heating effects in silicon resistors operated at cryogenic ambient temperatures," SolidState Electron., vol. 36, pp. 41-52, 1993.
16. F.J. De la Hidalga and E. A. Gutiérrez étal., "The n-MOS transistor as a low temperature thermometer," in Low Temperature Electronics and High Temperature Superconductivity, Electrochem. Soc. Proc. Ser. PV 97-2, C. Claeys et al, Eds. Pennington, NJ, 1997, pp. 387-394.
17. E. Rosencher, V. Mosser, and G. Vincent, "Transient current study of field-assisted emission from shallow levels in silicon," Phys. Rev. B, vol. 29, no. 3, pp. 1135-1147, 1984.
18. H.-Q. Nie and D.D. Coon, "Tunneling of holes from acceptors levels in an applied field," Solid-State Electron., vol. 27, pp. 53-58, 1984.
19. J.M. Hill and J. N. Dewynne, Heat Conduction. Oxford, U.K.: Blackwell Scientific , 1987.
20. R.D. Lindsted and R. J. Surty, "Steady-state junction temperatures of semiconductor chips," IEEE Trans. Electron Devices, vol. ED-19, pp. 41-44, 1972.
21. D. Smith, A. Fraser, and J. O'Neil, "Measurement and prediction of operating temperatures for GaAs IC's," in Proc. IEEE SEMI-THERM Symp., Dec. 1986, A.5.
22. P.B. Wolbert, G. K. Wachutka, B. H. Krabbenborg, and T. J. Mouthaan, "Nonisothermal device simulation using the 2-D numerical process/device simulator TRENDY and application to SOI-devices," IEEE Trans. Computer-Aided Design, vol. 13, no. 13, pp. 293-302, 1994.
23. J.K. Kirn, Y. J. Park, and H. S. Min, "Electrical properties of SOI n-MOSFET's under nonisothermal lattice temperature," Solid-State Electron., vol. 41, pp. 567-573, 1997.
24. W. van Petegem, B. Geeraerts, W. Sansen, and B. Graindourze, "Electrothermal simulation and design of integrated circuits," IEEE J. SolidState Circuits, vol. 29, no. 2, pp. 143-146, 1994.
25. A. Chryssafis and W. Love, "A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors," Solid-State Electron., vol. 22, pp. 249-256, 1979.
26. B.W. Ricketon, "Thermometry," in Cryogenic Engineering, N. A. Hands, Ed. New York: Academic , 1986, p. 457.
27. T. Nemoto, S. Sasaki, and Y Hakuraku, "Thermal conductivity of alumina and silicon carbide ceramics at low temperatures," Cryogenics, vol. 25, pp. 531-532, Sept. 1985.