Impact of plasma postoxidation temperature on the electrical properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETs

IEEE Transactions on Electron Devices

Volumn 61, Issue 2, 2014, Pages 416-422

  Zhang, Rui ^a,b   Lin, Ju Chin ^a   Yu, Xiao ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Germanium; interface roughness; mobility; MOSFET

Indexed keywords

CARRIER MOBILITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GERMANIUM; HOLE MOBILITY; INTERFACES (MATERIALS); OXIDATION; PLASMAS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACE ROUGHNESS; INTERFACE TRAP DENSITY; MOBILITY ENHANCEMENT; MOS-FET; OXIDATION TEMPERATURE; POST-OXIDATION; ROOM TEMPERATURE; THEORETICAL CALCULATIONS;

MOSFET DEVICES;

EID: 84893596274     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2295822     Document Type: Article

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