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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1069-1072
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Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy
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Author keywords
Bond angle; Central force network model; Force constant; H termination; HREELS; Oxidation process; SiO2; Structural change
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Indexed keywords
ADSORPTION;
AUGER ELECTRON SPECTROSCOPY;
ELECTRON BEAMS;
ELECTRON ENERGY LOSS SPECTROSCOPY;
HYDROGEN;
LOW ENERGY ELECTRON DIFFRACTION;
OXIDATION;
OXYGEN;
SILICA;
SUBSTRATES;
SURFACES;
ATOMIC HYDROGEN EXPOSURE;
AUGER ELECTRON SPECTROSCOPY MEASUREMENT;
OXYGEN ATOMS;
SUBSTRATE TEMPERATURE;
THERMAL CLEANING;
SEMICONDUCTING SILICON;
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EID: 0030078956
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.1069 Document Type: Article |
Times cited : (24)
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References (11)
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