Genetic design of enhanced valley splitting towards a spin qubit in silicon

Nature Communications

Volumn 4, Issue , 2013, Pages

  Zhang, Lijun ^a,b   Luo, Jun Wei ^b   Saraiva, Andre ^c   Koiller, Belita ^c   Zunger, Alex ^a  

^a UNIVERSITY OF COLORADO   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; QUANTUM DOT; SILICON;

ALLOY; ELECTRON; ELECTRONIC EQUIPMENT; GENETIC ALGORITHM; GERMANIUM; OPTIMIZATION; QUANTUM MECHANICS; SILICON;

ARTICLE; ELECTRON; ENERGY; GENETIC ALGORITHM; VALLEY SPLITTING;

EID: 84893411616     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3396     Document Type: Article

References (45)

1. Nielsen, M. A. & Chuang, I. L. Quantum Computation and Quantum Information (Cambridge University Press, 2000).
2. Loss, D. & DiVincenzo, D. P. Quantum computation with quantum dots. Phys. Rev. A 57, 120-126 (1998).
3. Kane, B. E. A silicon-based nuclear spin quantum computer. Nature 393, 133-137 (1998).
4. Vrijen, R. et al. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures. Phys. Rev. A 62, 012306 (2000).
5. Morton, J. J. L., McCamey, D. R., Eriksson, M. A. & Lyon, S. A. Embracing the quantum limit in silicon computing. Nature 479, 345-353 (2011).
6. Zwanenburg, F. A. et al. Silicon quantum electronics. Rev. Mod. Phys. 85, 961-1019 (2013).
7. Koiller, B., Hu, X. & Das Sarma, S. Exchange in silicon-based quantum computer architecture. Phys. Rev. Lett. 88, 027903 (2001).
8. Schäffler, F. High-mobility Si and Ge structures. Semiconduct. Sci. Technol. 12, 1515-1549 (1997).
9. Köhler, H. & Roos, M. Quantitative determination of the valley splitting in n-type inverted silicon (100) MOSFET surfaces. Phys. Stat. Solid. B 91, 233-241 (1979).
10. Nicholas, R., von Klitzing, K. & Englert, T. An investigation of the valley splitting in n-channel silicon 100 inversion layers. Sol. State Commun. 34, 51-55 (1980).
11. x heterostructures. Surface Sci. 361-362, 542-546 (1996).
12. Koester, S. J., Ismail, K. & Chu, J. O. Determination of spin- and valley-split energy levels in strained Si quantum wells. Semiconduct. Sci. Technol. 12, 384-388 (1997).
13. x heterostructures in tilted magnetic fields. Phys. Rev. B 73, 161301 (2006).
14. Goswami, S. et al. Controllable valley splitting in silicon quantum devices. Nat. Phys. 3, 41-45 (2007).
15. Borselli, M. G. et al. Measurement of valley splitting in high-symmetry Si/SiGe quantum dots. Appl. Phys. Lett. 98, 123118 (2011).
16. Boykin, T. B. et al. Valley splitting in strained silicon quantum wells. Appl. Phys. Lett. 84, 115 (2004).
17. Nestoklon, M. O., Golub, L. E. & Ivchenko, E. L. Spin and valley-orbit splittings in SiGe/Si heterostructures. Phys. Rev. B 73, 235334 (2006).
18. Valavanis, A., Ikonić, Z. & Kelsall, R. W. Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs effective mass calculation. Phys. Rev. B 75, 205332 (2007).
19. Friesen, M., Chutia, S., Tahan, C. & Coppersmith, S. N. Valley splitting theory of SiGe/Si/SiGe quantum wells. Phys. Rev. B 75, 115318 (2007).
20. Kharche, N., Prada, M., Boykin, T. B. & Klimeck, G. Valley splitting in strained silicon quantum wells modelled with 2° miscuts, step disorder, and alloy disorder. Appl. Phys. Lett. 90, 092109 (2007).
21. Saraiva, A. L., Calderón, M. J., Hu, X., Das Sarma, S. & Koiller, B. Physical mechanisms of interface-mediated intervalley coupling in Si. Phys. Rev. B 80, 081305 (2009).
22. Friesen, M. & Coppersmith, S. N. Theory of valley-orbit coupling in a Si/SiGe quantum dot. Phys. Rev. B 81, 115324 (2010).
23. Saraiva, A. L. et al. Intervalley coupling for interface-bound electrons in silicon: an effective mass study. Phys. Rev. B 84, 155320 (2011).
24. Zunger., A. First principles and second principles (semiempirical) pseudopotentials, chapter 13. In Quantum Theory of Real Materials. (eds Chelikowsky, J. R. & Louie, S. G.) 173-187 (Kluwer Academic Publishers, Boston, MA, 1996).
25. Wang, L.-W. & Zunger, A. Local-density-derived semiempirical pseudopotentials. Phys. Rev. B 51, 17398-17416 (1995).
26. Franceschetti, A. & Zunger, A. The inverse band-structure problem of finding an atomic configuration with given electronic properties. Nature 402, 60-63 (1999).
27. Piquini, P., Graf, P. A. & Zunger, A. Band-gap design of quaternary (In,Ga)(As,Sb) semiconductors via the inverse-band-structure approach. Phys. Rev. Lett. 100, 186403 (2008).
28. Boykin, T. B., Kharche, N. & Klimeck, G. Valley splitting in finite barrier quantum wells. Phys. Rev. B 77, 245320 (2008).
29. Poddubny, A. N., Nestoklon, M. O. & Goupalov, S. V. Anomalous suppression of valley splittings in lead salt nanocrystals without inversion center. Phys. Rev. B 86, 035324 (2012).
30. Jiang, Z., Kharche, N., Boykin, T. & Klimeck, G. Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells. Appl. Phys. Lett. 100, 103502 (2012).
31. Srinivasan, S., Klimeck, G. & Rokhinson, L. P. Valley splitting in Si quantum dots embedded in SiGe. Appl. Phys. Lett. 93, 112102 (2008).
32. Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A. & Ourmazd, A. Ge-Si layered structures: artificial crystals and complex cell ordered superlattices. Appl. Phys. Lett. 49, 286-288 (1986).
33. Franceschetti, A. et al. First-principles combinatorial design of transition temperatures in multicomponent systems: the case of Mn in GaAs. Phys. Rev. Lett. 97, 047202 (2006).
34. Dudiy, S. V. & Zunger, A. Searching for alloy configurations with target physical properties: impurity design via a genetic algorithm inverse band structure approach. Phys. Rev. Lett. 97, 046401 (2006).
35. d'Avezac, M., Luo, J.-W., Chanier, T. & Zunger, A. Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors. Phys. Rev. Lett. 108, 027401 (2012).
36. Zhang, L., d'Avezac, M., Luo, J.-W. & Zunger, A. Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires. Nano Lett. 12, 984-991 (2012).
37. Culcer, D., Hu, X. & Das Sarma, S. Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots. Phys. Rev. B 82, 205315 (2010).
38. n superlattices. Phys. Rev. B 47, 4099-4102 (1993).
39. Evans, P. G. et al. Nanoscale distortions of Si quantum wells in Si/SiGe quantum-electronic heterostructures. Adv. Mater. 24, 5217-5221 (2012).
40. 1- x layers with low threading dislocation densities grown on Si substrates. Appl. Phys. Lett. 59, 811-813 (1991).
41. Paul, D. J. Si/SiGe heterostructures: from material and physics to devices and circuits. Semiconductor Sci. Technol. 19, R75-R108 (2004).
42. Greve, D. W. Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition. Mater. Sci. Eng. B 18, 22-51 (1993).
43. Thomas, S. G. et al. Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapour deposition. J. Electron. Mater. 32, 976-980 (2003).
44. Isella, G. et al. Low-energy plasma-enhanced chemical vapour deposition for strained Si and Ge heterostructures and devices. Solid State Electron. 48, 1317-1323 (2004).
45. Bernard, J. E. & Zunger, A. Strain energy and stability of Si-Ge compounds, alloys, and superlattices. Phys. Rev. B 44, 1663-1681 (1991).