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Volumn 45, Issue 46-50, 2006, Pages

Effect of precise control of V/III ratio on in-rich InGaN epitaxial growth

Author keywords

In polarity; In rich InGaN; MBE; Shutter control

Indexed keywords

GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; SEMICONDUCTING INDIUM COMPOUNDS;

CRYSTALLINE QUALITY; SHUTTER CONTROL;

EPITAXIAL GROWTH;

EID: 34547920372 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L1259 Document Type: Article

Times cited : (16)

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