Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Applied Surface Science

Volumn 291, Issue , 2014, Pages 53-57

  Giannazzo, F ^a   Deretzis, I ^a   Nicotra, G ^a   Fisichella, G ^a,b   Spinella, C ^a   Roccaforte, F ^a   La Magna, A ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

Conductive atomic force microscopy; Electronic transport; Graphene; SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; SILICON CARBIDE;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRONIC TRANSPORT; EPITAXIAL GRAPHENE; FEW-LAYER GRAPHENE; INTERFACE STRUCTURES; MACROSCOPIC ANISOTROPY; NANO-SCALE MEASUREMENTS; RESISTANCE INCREASE;

GRAPHENE;

EID: 84891837373     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.10.041     Document Type: Article

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