Delaminated graphene at silicon carbide facets: Atomic scale imaging and spectroscopy

ACS Nano

Volumn 7, Issue 4, 2013, Pages 3045-3052

  Nicotra, Giuseppe ^a   Ramasse, Quentin M ^b   Deretzis, Ioannis ^a   La Magna, Antonino ^a   Spinella, Corrado ^a   Giannazzo, Filippo ^a  

^a CNR IMM   (Italy)

^b SUPERSTEM LABORATORY   (United Kingdom)

Author keywords

buffer layer delamination; EELS; epitaxial graphene; facets; SiC; STEM

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; EPITAXIAL GRAPHENE; FACETS; HIGH-TEMPERATURE ANNEALING; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SIC; SPECTROSCOPIC CHARACTERIZATION; STEM;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; DELAMINATION; ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

GRAPHENE;

GRAPHITE; INORGANIC COMPOUND; NANOMATERIAL; SILICON CARBIDE; SILICON DERIVATIVE; ARTIFICIAL MEMBRANE; MACROMOLECULE;

ARTICLE; ARTIFICIAL MEMBRANE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; CONFORMATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE; PROCEDURES;

CARBON COMPOUNDS, INORGANIC; ELECTRIC CONDUCTIVITY; GRAPHITE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MICROSCOPY, ATOMIC FORCE; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SILICON COMPOUNDS; SURFACE PROPERTIES;

EID: 84876572223     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn305922u     Document Type: Article

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