Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Vecchio, Carmelo ^a,b   Sonde, Sushant ^a,b   Bongiorno, Corrado ^a   Rambach, Martin ^c   Yakimova, Rositza ^d   Raineri, Vito ^a   Giannazzo, Filippo ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c Centrotherm Thermal Solutions GmbH + Co KG   (Germany)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROWTH TEMPERATURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INERT GASES; SILICON CARBIDE; SILICON COMPOUNDS; THERMAL EXPANSION; EPITAXIAL GROWTH; GRAPHENE; TRANSMISSION ELECTRON MICROSCOPY;

COMPRESSIVE STRAIN; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; EPITAXIAL GRAPHENE; NANOMETER RESOLUTIONS; STRUCTURAL CHARACTERIZATION; TAPPING-MODE ATOMIC FORCE MICROSCOPY; THERMAL EXPANSION COEFFICIENTS; WIDE TEMPERATURE RANGES; GAS AMBIENTS; GRAPHENE LAYERS; HIGH RESOLUTION; NANO SCALE; OFF-AXIS; SAMPLE COOLING; SAMPLE POSITION; SMALL SAMPLES; STEP EDGE; TEMPERATURE RANGE;

GRAPHENE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84255189665     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-269     Document Type: Article

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