Region-dependent behavior of IV characteristics in n-ZnO:Al/p-Si contacts

Materials Science in Semiconductor Processing

Volumn 13, Issue 5-6, 2010, Pages 339-343

  Shen, L ^a   Du, H W ^a   Ding, H ^a   Tang, J ^a   Ma, Z Q ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

Barrier height; Heterojunction; IV; ZnO Si

Indexed keywords

BARRIER HEIGHTS; CARRIER TRANSPORTATION; FLUCTUATING BARRIER; I - V CURVE; IV; IV CHARACTERISTICS; RECTIFYING CHARACTERISTICS; REVERSE CURRENTS; ZNO/SI;

HETEROJUNCTIONS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 82455175233     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.02.021     Document Type: Article

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