Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces

Applied Surface Science

Volumn 254, Issue 24, 2008, Pages 8000-8004

  Brillson, L J ^a   Mosbacker, H L ^a   Hetzer, M J ^a   Strzhemechny, Y ^b   Look, D C ^c   Cantwell, G ^d   Zhang, J ^d   Song, J J ^d,e  

^a OHIO STATE UNIVERSITY   (United States)

^b TEXAS CHRISTIAN UNIVERSITY   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

^d ZN Technology Inc   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemical reaction; Defect; Interface; Luminescence; Plasma; Schottky barrier; Spectroscopy; ZnO

Indexed keywords

CHEMICAL REACTIONS; CRYSTAL IMPURITIES; DEFECTS; II-VI SEMICONDUCTORS; INTERFACES (MATERIALS); LUMINESCENCE; METAL CLEANING; METALLIZING; METALS; PASSIVATION; PLASMAS; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; SPECTROSCOPY; SURFACE DEFECTS; ZINC OXIDE;

CATHODOLUMINESCENCE SPECTROSCOPY; ELECTRONIC TRANSPORT; METAL INTERACTIONS; POST-METALLIZATION ANNEALING; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SURFACE SCIENCE TECHNIQUES; ZNO SINGLE CRYSTALS;

SURFACE REACTIONS;

EID: 52949113832     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.050     Document Type: Article

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