Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Oshio, T ^a   Masuko, K ^a   Ashida, A ^a   Yoshimura, T ^a   Fujimura, N ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; OXIDE FILMS; OXYGEN VACANCIES; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; STOICHIOMETRY; ZINC OXIDE;

ELECTRODE INTERFACE; IMPEDANCE ANALYSIS; OPTICAL EMISSION; TEMPERATURE DEPENDENCE;

EPITAXIAL FILMS;

EID: 43949120449     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2905315     Document Type: Article

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