Temperature-Dependent Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

Brazilian Journal of Physics

Volumn 43, Issue 1-2, 2013, Pages 13-21

  Munikrishana Reddy, Y ^a   Nagaraj, M K ^a   Siva Pratap Reddy, M ^b   Lee, Jung Hee ^b   Rajagopal Reddy, V ^c  

^a SSBN Degree College   (India)

^b Kyungpook National University   (South Korea)

^c SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Barrier inhomogeneities; Gaussian distribution; Ideality factor; Ni Cu n InP Schottky diode

Indexed keywords

EID: 84874814404     PISSN: 01039733     EISSN: 16784448     Source Type: Journal    
DOI: 10.1007/s13538-013-0120-7     Document Type: Article

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