Effect of sputtering parameters on photoluminescence properties of Al doped ZnO films deposited on Si substrates

Ceramics International

Volumn 40, Issue 3, 2014, Pages 4847-4851

  Chen, Haixia ^a   Ding, Jijun ^b   Guo, Wenge ^a  

^a XI'AN SHIYOU UNIVERSITY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

C. Optical properties; Magnetron sputtering; ZnO:Al thin films

Indexed keywords

ANNEALING TEMPERATURES; HIGH SUBSTRATE TEMPERATURE; LIGHT EMISSION EFFICIENCY; PHOTOLUMINESCENCE PROPERTIES; RADIO FREQUENCY REACTIVE MAGNETRON SPUTTERING; SPUTTERING PARAMETERS; SUBSTRATE TEMPERATURE; ZNO:AL THIN FILMS;

ALUMINUM; LIGHT EMISSION; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON; THIN FILMS; ZINC OXIDE;

SUBSTRATES;

EID: 84891371862     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2013.09.034     Document Type: Article

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