Structural and photoluminescence properties of Al-doped ZnO films deposited on Si substrate

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 6, 2010, Pages 1861-1864

  Ding, J J ^a   Chen, H X ^a   Ma, S Y ^a  

^a NORTHWEST NORMAL UNIVERSITY   (China)

Author keywords

Optical properties; RF magnetron sputtering; X ray diffraction; ZnO thin films

Indexed keywords

AL CONTENT; AL-DOPED ZNO; AL-DOPING; ANNEALING TREATMENTS; BLUE-SHIFTED; CRYSTAL QUALITIES; CRYSTALLINITIES; EMISSION PEAKS; PHOTOLUMINESCENCE PROPERTIES; PL SPECTRA; RADIO FREQUENCIES; REACTIVE MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; SI SUBSTRATES; ZNO FILMS; ZNO THIN FILM; ZNO THIN FILMS; ZNO:AL THIN FILMS;

ALUMINUM; ANNEALING; DOPING (ADDITIVES); MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

OPTICAL FILMS;

EID: 77949266010     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.02.014     Document Type: Article

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