Structural, defect and optical properties of ZnO films grown under various O 2 /Ar gas ratios

Applied Surface Science

Volumn 255, Issue 22, 2009, Pages 9279-9284

  Hu, Y ^a   Chen, Y Q ^a   Wu, Y C ^a   Wang, M J ^a   Fang, G J ^a   He, C Q ^a   Wang, S J ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Defects; Optoelectronics; Oxygen; Positron annihilation; ZnO film

Indexed keywords

DEFECTS; ELECTRONS; GRAIN SIZE AND SHAPE; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; OXYGEN; PARTICLE BEAMS; PHOTOLUMINESCENCE; POSITRON ANNIHILATION; POSITRONS; SUBSTRATES; THIN FILMS; VACANCIES; ZINC OXIDE; ZINC SULFIDE;

DOPPLER BROADENING MEASUREMENTS; HEXAGONAL STRUCTURES; LUMINESCENCE EFFICIENCIES; PHOTOLUMINESCENCE SPECTRUM; PREFERENTIAL ORIENTATION; RADIO FREQUENCY MAGNETRON SPUTTERING; TRANSMITTANCE SPECTRA; ZNO FILMS;

OPTICAL FILMS;

EID: 68649123161     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.07.025     Document Type: Article

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