Low surface recombination velocity by low-absorption silicon nitride on c-Si

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue PART 2, 2012, Pages

  Wan, Yimao ^a   McIntosh, Keith R ^b   Thomson, Andrew F ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b PV Lighthouse   (Australia)

Author keywords

absorption; amorphous materials; charge carrier lifetime; silicon

Indexed keywords

ABSORPTION CO-EFFICIENT; CAPACITANCE VOLTAGE MEASUREMENTS; DENSITY OF INTERFACE STATE; EFFECTIVE CARRIER LIFETIMES; HIGH-EFFICIENCY SOLAR CELLS; SHOCKLEY-READ-HALL MODELS; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS;

ABSORPTION; AMORPHOUS MATERIALS; CHARGE CARRIERS; MOS CAPACITORS; OPTIMIZATION; PASSIVATION; SILICON; SOLAR CELLS;

SILICON NITRIDE;

EID: 84891112831     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC-Vol2.2013.6656792     Document Type: Conference Paper

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