Characterization of stress in amorphous silicon nitride and implications to c-Si surface passivation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 1139-1143

  Wan, Yimao ^a   McIntosh, Keith R ^b   Thomson, Andrew F ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b PV Lighthouse ^*  (Australia)

Author keywords

dielectric films; interface states; silicon; stress

Indexed keywords

BOND DENSITIES; ELECTRICAL INTERFACE; FILM STRESS; GAS RATIO; HYDROGEN PASSIVATION; INTERFACE DEFECTS; INTERFACIAL ELECTRICAL PROPERTIES; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; PROCESS CONDITION; PROCESS VARIABLES; SINGLE PROCESS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; WAFER CURVATURE; WAVE NUMBERS;

AMORPHOUS SILICON; DIELECTRIC FILMS; ELECTRIC PROPERTIES; INTERFACE STATES; ION BOMBARDMENT; PHASE INTERFACES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON WAFERS; STOICHIOMETRY; STRESSES;

SILICON NITRIDE;

EID: 84869427180     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317803     Document Type: Conference Paper

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